Related papers: Tunable singlet-triplet splitting in a few-electro…
Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar…
Understanding interactions between orbital and valley quantum states in silicon nanodevices is crucial in assessing the prospects of spin-based qubits. We study the energy spectra of a few-electron silicon metal-oxide-semiconductor quantum…
We measure the interdot charge relaxation time T_1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals…
Nanofabricated quantum bits permit large-scale integration but usually suffer from short coherence times due to interactions with their solid-state environment. The outstanding challenge is to engineer the environment so that it minimally…
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel…
We present a method for reading out the spin state of electrons in a quantum dot that is robust against charge noise and can be used even when the electron temperature exceeds the energy splitting between the states. The spin states are…
Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but…
We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley…
Double quantum dots are convenient solid-state platforms to encode quantum information. Two-electron spin states can be conveniently detected and manipulated using strong quantum selection rules based on the Pauli exclusion principle,…
Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimize spin qubits.…
Full electrical control of quantum bits could enable fast, low-power, scalable quantum computation. Although electric dipoles are highly attractive to couple spin qubits electrically over long distances, mechanisms identified to control…
We analyze the low-energy spectrum of a two-electron double quantum dot under a potential bias in the presence of an external magnetic field. We focus on the regime of spin blockade, taking into account the spin orbit interaction and…
Quantum computers have the potential to solve certain interesting problems significantly faster than classical computers. To exploit the power of a quantum computation it is necessary to perform inter-qubit operations and generate entangled…
Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion…
Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and…
Using real-time charge sensing and gate pulsing techniques we measure the ratio of the rates for tunneling into the excited and ground spin states of a single-electron AlGaAs/GaAs quantum dot in a parallel magnetic field. We find that the…
Current semiconductor qubits rely either on the spin or on the charge degree of freedom to encode quantum information. By contrast, in bilayer graphene the valley degree of freedom, stemming from the crystal lattice symmetry, is a robust…
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics…
Singlet-triplet spin blockade in a few-electron lateral double quantum dot is investigated using simultaneous transport and charge-sensing measurements. Transport from the (1,1) to the (0,2) electron occupancy states is strongly suppressed…
We report on ground- and excited state transport through an electrostatically defined few-hole quantum dot in bilayer graphene in both parallel and perpendicular applied magnetic fields. A remarkably clear level scheme for the two-particle…