Related papers: Tunable singlet-triplet splitting in a few-electro…
We introduce a method for analyzing ground state properties of quantum many body systems, based on the characterization of separability and entanglement by single subsystem unitary operations. We apply the method to the study of the ground…
We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interactions in single electron Si/SiGe lateral coupled quantum dots. The relaxation rates are computed numerically in single and double quantum…
We study the effect of the spin-orbit interaction on heavy holes confined in a double quantum dot in the presence of a magnetic field of arbitrary direction. Rich physics arise as the two hole states of different spin are not only coupled…
Wavefunction and interaction effects in the addition spectrum of a Coulomb blockaded many electron quantum ring are investigated as a function of asymmetrically applied gate voltages and magnetic field. Hartree and exchange contributions to…
An electron spin qubit in silicon quantum dots holds promise for quantum information processing due to the scalability and long coherence. An essential ingredient to recent progress is the employment of micromagnets. They generate a…
We demonstrate high-fidelity reversible transfer of quantum information from the polarisation of photons into the spin-state of an electron-hole pair in a semiconductor quantum dot. Moreover, spins are electrically manipulated on a…
A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is…
Electron spins confined in quantum dots are an attractive system to realize high-fidelity qubits owing to their long coherence time. With the prolonged spin coherence time, however, the control fidelity can be limited by systematic errors…
Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the…
We experimentally demonstrate quantum coherent dynamics of a triple-dot-based multi-electron hybrid qubit. Pulsed experiments show that this system can be conveniently initialized, controlled, and measured electrically, and has good…
We consider the transport spectroscopy of a quantum dot with an even number of electrons at finite bias voltage within the Coulomb blockade diamond. We calculate the tunneling current due to the elastic and inelastic co-tunneling processes…
We report implementation of a resonantly driven singlet-triplet spin qubit in silicon. The qubit is defined by the two-electron anti-parallel spin states and universal quantum control is provided through a resonant drive of the exchange…
The neutral biexciton cascade of single quantum dots is a promising source of entangled photon pairs. The character of the entangled state is determined by the energy difference between the excitonic eigenstates known as fine-structure…
Fast and high-fidelity quantum state detection is essential for building robust spin-based quantum information processing platforms in semiconductors. The Pauli spin blockade (PSB)-based spin-to-charge conversion and its variants are widely…
We model spin blockade for optically excited electrons and holes in a charged semiconductor quantum dot. We study the case where the quantum dot is initially charged with a single electron and is then filled with an additional, optically…
The gate fidelity and the coherence time of a qubit are important benchmarks for quantum computation. We construct a qubit using a single electron spin in a Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field…
By applying our methodology, we propose a defect in 4H-SiC which combines a Si vacancy and a C atom substituted with S (VSiSC) to have a spin-triplet ground state with the spin qubit functionality. Our calculations confirm that all…
The magnetization of semiconductor quantum dots in the presence of spin-orbit coupling and interactions is investigated numerically. When the dot is occupied by two electrons we find that a level crossing between the two lowest many-body…
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show…
The magnetic character of the ground-state of two electrons on a double quantum dot, connected in series to left and right single-channel leads, is considered. By solving exactly for the spectrum of the two interacting electrons, it is…