English

Resonantly driven singlet-triplet spin qubit in silicon

Mesoscale and Nanoscale Physics 2020-03-24 v1

Abstract

We report implementation of a resonantly driven singlet-triplet spin qubit in silicon. The qubit is defined by the two-electron anti-parallel spin states and universal quantum control is provided through a resonant drive of the exchange interaction at the qubit frequency. The qubit exhibits long T2T_2^* exceeding 1 μ\mus that is limited by dephasing due to the 29^{29}Si nuclei rather than charge noise thanks to the symmetric operation and a large micro-magnet Zeeman field gradient. The randomized benchmarking shows 99.6 % single gate fidelity which is the highest reported for singlet-triplet qubits.

Keywords

Cite

@article{arxiv.1910.00771,
  title  = {Resonantly driven singlet-triplet spin qubit in silicon},
  author = {Kenta Takeda and Akito Noiri and Jun Yoneda and Takashi Nakajima and Seigo Tarucha},
  journal= {arXiv preprint arXiv:1910.00771},
  year   = {2020}
}

Comments

12 pages, 4 figures

R2 v1 2026-06-23T11:32:22.826Z