Related papers: Balanced ternary addition using a gated silicon na…
This paper presents the design of an 800 V 11 kVA three-level three-phase active neutral point clamped inverter, utilizing 650 V gallium nitride enhancement-mode high-electron-mobility transistors, to evaluate its feasibility in electric…
Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon…
In recent years, reversible logic has emerged as a promising computing paradigm having application in low power CMOS, quantum computing, nanotechnology, and optical computing. The classical set of gates such as AND, OR, and EXOR are not…
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…
A requirement for quantum information processors is the in-situ tunability of the tunnel rates and the exchange interaction energy within the device. The large energy level separation for atom qubits in silicon is well suited for qubit…
An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel…
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded…
In the pursuit of room temperature quantum hardware, our study introduces a gate voltage tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate voltage alters the parabolic potential well of the…
A particle that can be used to create an active magnetic metamaterial has been designed using an FET transistor loaded in its gate by a conducting ring and in its source by a parallel resonance circuit. The design procedure is discussed and…
We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a…
Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to…
Overcoming the influence of noise and imperfections in quantum devices is one of the main challenges for viable quantum applications. In this article, we present different protocols, which we denote as "superposed quantum error mitigation",…
We show that it is possible to reduce the number of two-qubit gates needed for the construction of an arbitrary controlled-unitary transformation by up to two times using a tunable controlled-phase gate. On the platform of linear optics,…
We develop a systematic method of performing corrected gate operations on an array of exchange-coupled singlet-triplet qubits in the presence of both fluctuating nuclear Overhauser field gradients and charge noise. The single-qubit control…
From first-principles calculations, we predict that transition metal (TM) atom doped silicon nanowires have a half-metallic ground state. They are insulators for one spin-direction, but show metallic properties for the opposite spin…
Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck for scaling. Demultiplexing via on-chip circuitry offers an…
We propose the concept of a quantized single-electron source based on the interplay between Coulomb blockade and magnetic flux-controllable superconducting proximity effect. We show that flux dependence of the induced energy gap in the…
Quantum computation using electron spins in three coupled dot with different size is proposed. By using the energy selectivity of both photon assisted tunneling and spin rotation of electrons, logic gates are realized by static and…
The ability to reversibly and site-selectively tune ambipolar doping in a single semiconductor is crucial for reconfigurable electronics beyond silicon, but remains highly challenging. Here, we present a rewritable architecture based on…
Single-electron transistors would represent an approach for less power consuming microelectronic devices if room-temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small,…