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Reversible circuits have applications in digital signal processing, computer graphics, quantum computation and cryptography. In this paper, a generalized k*k reversible gate family is proposed and a 3*3 gate of the family is discussed.…
Inducing an inversion layer in organic semiconductors is a highly nontrivial, but critical, achievement for producing organic field-effect transistor (OFET) devices, which rely on the generation of inversion, accumulation, and depletion…
Quantum addition based on the quantum Fourier transform can be an integral part of a quantum circuit and proved to be more efficient than the existing classical ripple carry adder. Our study includes identifying the quantum resource…
This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded…
We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electrodes. These resistors replace small-area oxide tunnel…
In this paper, we demonstrate by simulation the feasibility of electrostatically doped and therefore reconfigurable planar field-effect-transistor (FET) structure which is based on our already fabricated and published Si-nanowire (SiNW)…
We propose and numerically simulate novel reconfigurable logic gates employing spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The output characteristics of the spin MOSFETs depend on the relative magnetization…
We propose a method for exact circuit synthesis using a discrete gate set, as required for fault-tolerant quantum computing. Our approach translates the problem of synthesizing a gate specified by its unitary matrix into a boolean…
We propose a new solid state implementation of a quantum computer (quputer) using ballistic single electrons as flying qubits in 1D nanowires. We use a single electron pump (SEP) to prepare the initial state and a single electron transistor…
We present a method for measuring single spins embedded in a solid by probing two electron systems with a single electron transistor (SET). Restrictions imposed by the Pauli Principle on allowed two electron states mean that the spin state…
An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low…
Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…
Segregation engineering has emerged as a promising pathway towards designing thermally stable nanocrystalline alloys with enhanced mechanical properties. However, the compositional and processing space for solute stabilized microstructures…
C$_3$N is a recently discovered 2D layered material structurally similar to graphene, which has demonstrated immense prospect for future nanoelectronics. In this work, we have designed and investigated the operation and performance of a…
Memristors, when utilized as electronic components in circuits, can offer opportunities for the implementation of novel reconfigurable electronics. While they have been used in large arrays, studies in ensembles of devices are comparatively…
We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between…
We describe nonlinear phonon-thermoelectric devices where charge current and electronic and phononic heat currents are coupled, driven by voltage and temperature biases, when phonon-assisted inelastic processes dominate the transport. Our…
Strain engineering allows the physical properties of materials and devices to be widely tailored, as paradigmatically demonstrated by strained transistors and semiconductor lasers employed in consumer electronics. For this reason, its…
We have fabricated and characterized a new type of electrometer that couples two parallel single-electron transistors (SETs) to a radio-frequency tank circuit for use as a differential RF-SET. We demonstrate operation of this device in…
We improve the number of T gates needed to perform an n-bit adder from 8n + O(1) to 4n + O(1). We do so via a "temporary logical-AND" construction which uses four T gates to store the logical-AND of two qubits into an ancilla and zero T…