Related papers: Balanced ternary addition using a gated silicon na…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
In quantum computation, information is processed by gates that must coherently couple separate qubits. In many systems the qubits are naturally coupled, but such an always-on interaction limits the algorithms that may be implemented.…
The current noise spectrum of a single-electron transistor (SET) coupled to a nano-mechanical resonator is calculated in the classical regime. Correlations between the charge on the SET island and the position of the resonator give rise to…
In this article the elementary gates for ternary quantum logic circuit are studied. We propose the ternary controlled X (TCX) gate or ternary controlled Z (TCZ) gate as two-qutrit elementary gate, which is universal when assisted by…
We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…
Quantum error correction is essential for achieving practical quantum computing but has a significant computational overhead. Among fault-tolerant (FT) gate operations, non-Clifford gates, such as $T$, are particularly expensive due to…
Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky,…
Nano-electronic integrated circuit technology is exclusively based on MOSFET transistor due to its scalability down to the nanometer range. On the other hand, Bipolar Junction Transistor (BJT), which provides unmatched analog…
Quantum computation is conventionally performed using quantum operations acting on two-level quantum bits, or qubits. Qubits in modern quantum computers suffer from inevitable detrimental interactions with the environment that cause errors…
This paper presents a novel way to use the algebra of unit quaternions to express arbitrary roots or fractional powers of single-qubit gates, and to use such fractional powers as generators for algebras that combine these fractional input…
By using the memristor's memory to both store a bit and perform an operation with a second input bit, simple Boolean logic gates have been built with a single memristor. The operation makes use of the interaction of current spikes…
We theoretically investigate spin dependent transport in ferromagnetic/normal metal/ferromagnetic single electron transistors by applying master equation calculations using a two dimensional space of states involving spin and charge degrees…
It is understood that molecular conjugation plays an important role in charge transport through single-molecule junctions. Here, we investigate electron transport through an anthraquinone based single-molecule three-terminal device. With…
Multi-valued logic gates, which can handle quaternary numbers as inputs, are developed by exploiting the ballistic transport properties of quantum point contacts in series. The principle of a logic gate that finds the minimum of two…
A nanoscale variable resistor consisting of a metal nanowire (active element), a dielectric, and a gate, is proposed. By means of the gate voltage, stochastic transitions between different conducting states of the nanowire can be induced,…
We present a mechanism for quantum gates where the qubits are encoded in the population distribution of two component ultracold atoms trapped in a species-selective triple-well potential. The gate operation is a specific application of a…
The electrostatic coupling between singled-walled carbon nanotube (SWNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit…
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…
By varying the gate and substrate voltage in a short silicon-on-insulator trigate field effect transistor we control the ionization state of three arsenic donors. We obtain a good quantitative agreement between 3D electrostatic simulation…
We have used a superconducting single-electron transistor as a DC-electrometer that is strongly coupled to the metal island of another transistor. With this set-up, it is possible to directly measure the charge distribution on this island.…