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Related papers: Balanced ternary addition using a gated silicon na…

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While many papers have proposed implementations of ternary adders and ternary multipliers, no comparisons have generally been done with the corresponding binary ones. We compare the implementations of binary and ternary adders and…

Hardware Architecture · Computer Science 2019-08-21 Daniel Etiemble

We theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron-electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify…

Mesoscale and Nanoscale Physics · Physics 2017-11-30 Rafael Sánchez , Holger Thierschmann , Laurens W. Molenkamp

We have fabricated aluminum single-electron transistors in which the island is not in contact with the substrate. This new type of device, which can be called suspended single-electron transistor (SUSET), displayed well-defined I-V and…

Superconductivity · Physics 2009-11-13 G. S. Paraoanu , A. M. Halvari

In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…

Materials Science · Physics 2014-05-30 Tillmann Krauss , Frank Wessely , Udo Schwalke

We introduce a novel logic style with self-checking capability to enhance hardware reliability at logic level. The proposed logic cells have two-rail inputs/outputs, and the functionality for each rail of outputs enables construction of…

Hardware Architecture · Computer Science 2023-06-02 Mahdi Taheri , Saeideh Sheikhpour , Ali Mahani , Maksim Jenihhin

Using a one-dimensional tight-binding Anderson model, we study a disordered nanowire in the presence of an external gate which can be used for depleting its carrier density (field effect transistor device configuration). In this first…

Mesoscale and Nanoscale Physics · Physics 2014-05-01 Riccardo Bosisio , Geneviève Fleury , Jean-Louis Pichard

A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain…

Atomic Physics · Physics 2016-02-17 Seth C. Caliga , Cameron J. E. Straatsma , Alex A. Zozulya , Dana Z. Anderson

In order to make a densely packed assembly of undoped semiconductor nanocrystals conductive, it is usually gated by a room temperature ionic liquid. The ionic liquid enters the pores of the super-crystal assembly under the influence of an…

Mesoscale and Nanoscale Physics · Physics 2011-12-15 Tianran Chen , Brian Skinner , B. I. Shklovskii

We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer…

The electron acceptor molecule TCNQ is found in either of two distinct integer charge states when embedded into a monolayer of a charge transfer-complex on a gold surface. Scanning tun- neling spectroscopy measurements identify these states…

The basis of synchronous manipulation of individual electrons in solid-state devices was laid by the rise of single-electronics about two decades ago. Ultra-small structures in a low temperature environment form an ideal domain of…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 Jukka P. Pekola , Juha J. Vartiainen , Mikko Mottonen , Olli-Pentti Saira , Matthias Meschke , Dmitri V. Averin

Single electron transistors (SETs) are very sensitive electrometers and they can be used in a range of applications. In this paper we give an introduction to the SET and present a full quantum mechanical calculation of how noise is…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 G. Johansson , P. Delsing , K. Bladh , D. Gunnarsson , T. Duty , A. Käck , G. Wendin , A. Aassime

We report on the fabrication and measurement of nanoscale devices based on bilayer graphene sandwiched between hexagonal boron nitride bottom and top gate dielectrics. The top gates are patterned such that constrictions and islands can be…

Mesoscale and Nanoscale Physics · Physics 2013-04-10 Augustinus , M. Goossens , Stefanie C. M. Driessen , Tim A. Baart , Kenji Watanabe , Takashi Taniguchi , Lieven M. K. Vandersypen

We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and…

Mesoscale and Nanoscale Physics · Physics 2012-08-08 Massimo Mongillo , Panayotis Spathis , Georgios Katsaros , Pascal Gentile , Silvano De Franceschi

Ternary quantum information processing in superconducting devices poses a promising alternative to its more popular binary counterpart through larger, more connected computational spaces and proposed advantages in quantum simulation and…

Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain junction and thus can be easier to implement in aggressive…

Metal/semiconductor interfaces govern the operation of semiconductor devices through the formation of charge injection barriers that can be controlled by tuning the metal work function. However, the controlling ability is typically limited…

Materials Science · Physics 2014-01-14 Ryo Nouchi , Masanori Shigeno , Nao Yamada , Tomoaki Nishino , Katsumi Tanigaki , Masahiko Yamaguchi

Ternary logic system is the most promising and pursued alternate to the prevailing binary logic systems due to the energy efficiency of circuits following reduced circuit complexity and chip area. In this paper, we have proposed a ternary…

Emerging Technologies · Computer Science 2021-08-24 Zarin Tasnim Sandhie , Farid Uddin Ahmed , Masud H. Chowdhury

We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through…

Mesoscale and Nanoscale Physics · Physics 2016-05-26 Tobias Wenz , Frank Hohls , Xavier Jehl , Marc Sanquer , Sylvain Barraud , Jevgeny Klochan , Girts Barinovs , Vyacheslavs Kashcheyevs

It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…

Disordered Systems and Neural Networks · Physics 2009-10-31 Boris L. Altshuler , Dmitrii L. Maslov
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