Related papers: Evidence for semiconducting behavior with a narrow…
The zero band gap (Eg) graphene becomes narrow Eg semiconductor when graphene is patterned with periodic array of hexagonal shaped antidots, the resultant is the hexagonal Graphene Antidot Lattice (hGAL). Based on the number of atomic…
The coherent, interlayer resistance of a misoriented, rotated interface between two stacks of AB graphite is determined for a variety of misorientation angles. The quantum-resistance of the ideal AB stack is on the order of 1 to 10 m$\Omega…
We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge…
We describe the electronic conductivity, as a function of the Fermi energy, in the Bernal bilayer graphene (BLG) in presence of a random distribution of vacancies that simulate resonant adsorbates. We compare it to monolayer (MLG) with the…
Measuring with high precision the electrical resistance of highly ordered natural graphite samples from a Brazil mine, we have identified a transition at $\sim$350~K with $\sim$40~K transition width. The step-like change in temperature of…
The effect of contact architecture, graphene defect density and metal-semiconductor work function difference on resistivity of metal-graphene contacts have been investigated. An architecture with metal on the bottom of graphene is found to…
Bilayer graphene (two coupled graphitic monolayers arranged according to Bernal stacking) is a two-dimensional gapless semiconductor with a peculiar electronic spectrum different from the Dirac spectrum in the monolayer material. In…
In this work we investigated correlations between the internal microstructure and sample size (lateral as well as thickness) of mesoscopic, tens of nanometer thick graphite (multigraphene) samples and the temperature $(T)$ and field $(B)$…
A thin conducting sheet - graphene, for example - transmits, absorbs, and reflects radiation. A sheet that is very thin, even vanishingly so, can still produce 50% absorption at normal incidence if it has conductivity corresponding to half…
The absence of an energy gap separating valence and conduction bands makes the low-energy electronic properties of graphene and its multi-layers sensitive to electron-electron interactions. In bilayers, for instance, interactions are…
The graphene is a native two-dimensional crystal material consisting of a single sheet of carbon atoms. In this unique one-atom-thick material, the electron transport is ballistic and is described by a quantum relativistic-like Dirac…
Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…
We studied the effect of low energy (30 keV) ionic implantation of Ga+ in the direction parallel to the graphene planes (perpendicular to c-axis) in oriented graphite ribbons with widths around 500 nm. Our experiments have reproducibly…
We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using…
Superconductivity (SC) is a ubiquitous feature of graphite allotropes, having been observed in Bernal bilayers[1], rhombohedral trilayers[2], and a wide variety of angle-misaligned multilayers[3-6]. Despite significant differences in the…
In this express, we demonstrate few-layer orthorhombic arsenene is an ideal semiconductor. Due to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of around 1 eV. In addition,…
Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…
Bernal stacked bilayer graphene subject to a superlattice potential can realize topological and stacked flat bands [1]. In the present work, we extend the study of a superlattice potential on graphene heterostructures to trilayer and…
Realization of logic circuits in graphene with an energy gap (EG) remains one of the main challenges for graphene electronics. We found that large transport EGs (>100 meV) can be fulfilled in dual-gated bilayer graphene underneath a simple…
Graphene revealed a number of unique properties beneficial for electronics. However, graphene does not have an energy band-gap, which presents a serious hurdle for its applications in digital logic gates. The efforts to induce a band-gap in…