We studied the effect of low energy (30 keV) ionic implantation of Ga+ in the direction parallel to the graphene planes (perpendicular to c-axis) in oriented graphite ribbons with widths around 500 nm. Our experiments have reproducibly shown a reduction of electrical resistance upon implan- tation consistent with the occurrence of ionic channeling in our devices. Our results allow for new approaches in the modulation of the charge carrier concentration in mesoscopic graphite.
@article{arxiv.1806.09934,
title = {Electrical properties of in-plane-implanted graphite nanoribbons},
author = {B. C. Camargo and R. F. de Jesus and B. V. Semenenko and C. E. Precker},
journal= {arXiv preprint arXiv:1806.09934},
year = {2018}
}