We report on the fabrication and electrical characterization of both single layer graphene micron-sized devices and nanoribbons on a hexagonal boron nitride substrate. We show that the micron-sized devices have significantly higher mobility and lower disorder density compared to devices fabricated on silicon dioxide substrate in agreement with previous findings. The transport characteristics of the reactive-ion-etched graphene nanoribbons on hexagonal boron nitride, however, appear to be very similar to those of ribbons on a silicon dioxide substrate. We perform a detailed study in order to highlight both similarities as well as differences. Our findings suggest that the edges have an important influence on transport in reactive ion-etched graphene nanodevices.
@article{arxiv.1302.1057,
title = {Reactive-Ion-Etched Graphene Nanoribbons on a Hexagonal Boron Nitride Substrate},
author = {Dominik Bischoff and Tobias Krähenmann and Susanne Dröscher and Michelle A. Gruner and Clément Barraud and Thomas Ihn and Klaus Ensslin},
journal= {arXiv preprint arXiv:1302.1057},
year = {2013}
}