We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrouoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced doping level after HF dipping. Interestingly, the effective energy gap is nearly unaffected by the HF treatment. Additional measurements on a graphene nanoribbon with lateral graphene gates support strong indications that the HF significantly modifies the edges of the investigated nanoribbons leading to a significantly reduced disorder potential in these graphene nanostructures.
@article{arxiv.1311.5124,
title = {Reducing disorder in graphene nanoribbons by chemical edge modification},
author = {Jan Dauber and Bernat Terrés and Christian Volk and Stefan Trellenkamp and Christoph Stampfer},
journal= {arXiv preprint arXiv:1311.5124},
year = {2014}
}