Insulating state in low-disorder graphene nanoribbons

We report on quantum transport measurements on etched graphene nanoribbons encapsulated in hexagonal boron nitride (hBN). At zero magnetic field our devices behave qualitatively very similar to what has been reported for graphene nanoribbons on $\text{SiO}_2$ or hBN, but exhibit a considerable smaller transport gap. At magnetic fields of around $3~$T the transport behavior changes considerably and is dominated by a much larger energy gap induced by electron-electron interactions completely suppressing transport. This energy gap increases with a slope on the order of $3-4~$meV/T reaching values of up to $30~\mathrm{meV}$ at $9~$T.