Bilayer graphene (two coupled graphitic monolayers arranged according to Bernal stacking) is a two-dimensional gapless semiconductor with a peculiar electronic spectrum different from the Dirac spectrum in the monolayer material. In particular, the electronic Fermi line in each of its valleys has a strong p -> -p asymmetry due to a trigonal warping, which suppresses the weak localization effect. We show that weak localisation in bilayer graphene may be present only in devices with pronounced intervalley scattering, and we evaluate the corresponding magnetoresistance.
@article{arxiv.cond-mat/0701690,
title = {Influence of trigonal warping on interference effects in bilayer graphene},
author = {K. Kechedzhi and Vladimir I. Fal'ko and E. McCann and B. L. Altshuler},
journal= {arXiv preprint arXiv:cond-mat/0701690},
year = {2007}
}