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We realize a superconductor-coupled quantum dot (QD) in an InSb nanosheet, a 2D platform promising for studies of topological superconductivity. The device consists of a superconductor-QD-superconductor junction, where a bottom bilayer gate…
Recent advances in nanotechnology have enabled researchers to manipulate small collections of quantum mechanical objects with unprecedented accuracy. In semiconductor quantum dot qubits, this manipulation requires controlling the dot…
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of SiGe heterostructures. To preserve the substrate structure…
In Si(111) crystals, a strong biaxial tensile strain applied within the (111) plane is considered to shift the lowest energy point of the conduction band from the $\Delta$ valley to the L valley. Electrons confined in this L valley…
Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a step-like behavior in…
We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long…
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for…
We present a theoretical analysis of the effect of dielectric confinement on the Coulomb interaction in dielectrically modulated quantum structures. We discuss the implications of the strong enhancement of the electron-hole and…
The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are stud- ied in buried amorphous Si (a-Si) layers in which SPE is not retarded by H. As, P, B and Al profiles were formed by multiple energy ion implantation over a…
We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al_2O_3, as…
Spin qubits need to operate within a very precise voltage space around charge state transitions to achieve high-fidelity gates. However, the stability diagrams that allow the identification of the desired charge states are long to acquire.…
Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots.…
We investigate the tunability of electrostatic coupling between solid state quantum dots as building blocks for quantum bits. Specifically, our analysis is based upon two-dimensional electron systems (2DEG) and depletion by top gates. We…
Discrete charge fluctuations, routinely observed in semiconductor quantum dot devices, may contribute significantly to device drift and errors resulting from qubit miscalibration. Understanding the nature and origins of these discrete…
Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion…
Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here, we exploit…
Silicon-Germanium (SiGe) is a material that possesses a multitude of applications ranging from transistors to eletro-optical modulators and quantum dots. The diverse properties of SiGe also make it attractive to implementations involving…
We present a few electron double quantum dot (QD) device defined in an isotopically purified $^{28}$Si quantum well (QW). An electron mobility of $5.5 \cdot 10^4 cm^2(Vs)^{-1}$ is observed in the QW which is the highest mobility ever…
Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward…
We investigate transport properties of stable gate-defined quantum dots formed in an InSb$_{0.87}$As$_{0.13}$ quantum well. High $\textit{g}$-factor and strong spin-orbit-coupling make InSb$_x$As$_{1-x}$ a promising platform for exploration…