The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are stud- ied in buried amorphous Si (a-Si) layers in which SPE is not retarded by H. As, P, B and Al profiles were formed by multiple energy ion implantation over a con- centration range of 1 - 30 x 1019 /cm3. Anneals were performed in air over the temperature range 460-660 oC and the rate of interface motion was monitored us- ing time resolved reflectivity. The dopant-enhanced SPE rates were modeled with the generalized Fermi level shifting model using degenerate semiconductor statis- tics. The effect of band bending between the crystalline and amorphous sides of the interface is also considered.
@article{arxiv.1007.5372,
title = {Dopant-enhanced solid phase epitaxy in buried amorphous silicon layers},
author = {B. C. Johnson and J. C. McCallum},
journal= {arXiv preprint arXiv:1007.5372},
year = {2010}
}
Comments
45 pages, 15 figures, 2 tables, accepted for publication in Physical Review B