Related papers: Development of Active Pixel Photodiode Sensors for…

CMOS Monolithic Active Pixel Sensors (CPS) are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Being manufactured with cost efficient standard CMOS processes, CPS may integrate…

A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation…

A novel gaseous two-dimensional imaging detector "Micro Pixel Chamber (micro-PIC)" has been developed. This detector is based on double sided printed circuit board (PCB). We have developed large area (10cm x 10cm) micro-PICs with 65536…

A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature…

CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The small sensor capacitance results in a large ratio of signal-to-noise and a low…

The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a photodiode increases the optical efficiency of the pixel in…

We present a novel way of wavefront sensing using a commercially available, continuous-wave time-of-flight camera with QVGA-resolution. This CMOS phase camera is capable of sensing externally modulated light sources with frequencies up to…

Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each…

The CMOS camera found in many cellphones is sensitive to ionized electrons. Gamma rays penetrate into the phone and produce ionized electrons that are then detected by the camera. Thermal noise and other noise needs to be removed on the…

The Geiger photodiodes, or single photon avalanche photodiodes, for a radiation tolerant solid-state photomultiplier (SSPM) are being designed using Aluminum Gallium Arsenide (AlGaAs) and are less than 1 micrometer thick. Studies on the…

The performance of hybrid GaAs pixel detectors as X-ray imaging sensors were investigated at room temperature. These hybrids consist of 300 mu-m thick GaAs pixel detectors, flip-chip bonded to a CMOS Single Photon Counting Chip (PCC). This…

CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher…

Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $\mu$m) in which charge is collected on an electrode, albeit by disordered and slow…

Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure…

We present a wide-field homodyne imaging system capable of recovering intensity and phase images of an object from a single camera frame at an illumination intensity significantly below the noise floor of the camera. By interfering a weak…

Prototype of gamma ray detector based on Micro Pixel Avalanche Photodiodes (MAPD) with high pixel density 15000 pixel/$mm^2$, optically coupled to Lutetium Fine Silicate (LFS) scintillator has been developed. The detection performance…

Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected…

LISA will use quadrant photoreceivers as front-end devices for the phasemeter measuring the motion of drag-free test masses in both angular orientation and separation. We have set up a laboratory testbed for the characterization of…

Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active…

Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths,…