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We have theoretically investigated the thermoelectric properties of impurity-doped one-dimensional semiconductors, focusing on nitrogen-substituted (N-substituted) carbon nanotubes (CNTs), using the Kubo formula combined with a…
Semiconductor failure analysis (FA) requires engineers to examine inspection images, correlate equipment telemetry, consult historical defect records, and write structured reports, a process that can consume several hours of expert time per…
In this work faster unsigned multiplication has been achieved by using a combination of High Performance Multiplication [HPM] column reduction technique and implementing a N-bit multiplier using 4 N/2-bit multipliers (recursive…
The field effect in metal-oxide-semiconductor (MOS) capacitors plays a key role in field-effect transistors (FETs), which are the fundamental building blocks of modern digital integrated circuits. Recent works show that the field effect can…
In this paper, we propose a transmission mechanism for fluid antennas (FAs) enabled multiple-input multiple-output (MIMO) communication systems based on index modulation (IM), named FA-IM, which incorporates the principle of IM into…
We demonstrate the field-effect transistor (FET) operation of molecularly-thin anatase phase produced through solid state transformation from Ti0.87O2 nanosheets. Monolayer Ti0.87O2 nanosheet with a thickness of 0.7 nm is two-dimensional…
This study aims to design a series of non-fullerene acceptors (NFAs) for photovoltaic applications having 2,3-quinoxalinedione,1,4-dihydro fused thiophene derivative as the core unit and 1,1-dicyanomethylene-3-indanone (IC) derivatives and…
A high energy beam absorber has been built for the Advanced Superconducting Test Accelerator (ASTA) at Fermilab. In the facility's initial configuration, an electron beam will be accelerated through 3 TTF-type or ILC-type RF cryomodules to…
We present a full-stack optimization framework for accelerating inference of CNNs (Convolutional Neural Networks) and validate the approach with field-programmable gate arrays (FPGA) implementations. By jointly optimizing CNN models,…
During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electronic devices and circuits communities. At the same time,…
We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $\mu$m…
Many accelerators require considerable electronic systems for tests, verification, and operation. In Shenzhen Superconducting Soft X-ray Free Electron Laser (S3FEL), to meet the early tests and verification of various systems, save…
Frequency multipliers, a class of essential electronic components, play a pivotal role in contemporary signal processing and communication systems. They serve as crucial building blocks for generating high-frequency signals by multiplying…
In this paper, a new design has been proposed for the realization of high-frequency memcapacitor emulators built with three OTAs. This paper also proposes the application of memcapacitor as an amplitude modulator. Furthermore, applications…
This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area…
Dielectric capacitors are critical components in electronics and energy storage devices. The polymer based dielectric capacitors have advantages of flexibility, fast charge and discharge, low loss, and graceful failure. Elevating the use of…
Silicon ferroelectric field-effect transistors (FeFETs) with low-k interfacial layer (IL) between ferroelectric gate stack and silicon channel suffers from high write voltage, limited write endurance and large read-after-write latency due…
Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with…
Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results of the ``metallic cylinder on an infinite metal plate…
The operation of an integrated two-dimensional complementary metal-oxide-semiconductor inverter with well-matched input/output voltages is reported. The circuit combines a few-layer MoS2 n-MOSFET and a black phosphorus (BP) p-MOSFET…