Related papers: Spin-Charge Locking and Tunneling into a Helical M…
The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating…
We theoretically study the role of electron-electron interactions in one-dimensional magnetized helical states coupled to an s-wave superconductor. We consider a partially mixed helical (superhelical) regime, where the magnetic field…
The relation between tunnel magneto-resistance (TMR) and spin polarization is explored for GaMnAs/GaAlAs/GaMnAs structures where the carriers experience strong spin-orbit interactions. TMR is calculated using Landauer approach. The…
The functionality of many biological systems depends on reliable electron transfer with minimal heating. Unlike man-made electric circuits, nature realizes electron transport via insulating chiral molecules. Here we include spin into the…
The topological insulator/ferromagnetic metal (TI/FMM) bilayer thin films emerged as promising topological surface state-based spintronic devices, most notably in their efficiency of current-induced spin torque. Using a cubic lattice model,…
We study current carrying helical edge states in a two-dimensional topological insulator coupled to an environment of localized spins, i.e. a spin bath. The localized spins mediate elastic spin-flip scattering between the helical edge…
Conventional and spin-related thermoelectric effects in transport through a magnetic tunnel junction with a large-spin impurity, such as a magnetic molecule or atom, embedded into the corresponding barrier are studied theoretically in the…
The features of the spin and charge transport of electrons and holes in a metal and a semiconductor were studied using the Boltzmann transport equations. It was shown that the electrons and holes carry the spin in opposite directions in an…
Based on micromagnetic simulations, we report on a novel helical magnetic structure in a soft magnetic film that is sandwiched between and exchange-coupled to two hard magnetic layers. Confined between antiparallel hard magnetic moments, a…
In a recent experiment, Young et al. [Nature {\bf 505}, 528 (2014)] observed a metal to insulator transition as well as transport through helical edge states in monolayer graphene under a strong, tilted magnetic field. Under such…
Non-adiabatic contribution of environmental degrees of freedom yields effective inertia of spin in effective spin dynamics. In this paper, we study several aspects of the inertia of spin in metallic ferromagnets. (i) a concrete expression…
A two-dimensional topological insulator (2DTI) has an insulating bulk and helical spin-polarised edge modes robust to backscattering by non-magnetic disorder. While ballistic transport has been demonstrated in 2DTIs over short distances,…
Tunneling electroresistance (TER) effect is the change in the electrical resistance of a ferroelectric tunnel junction (FTJ) associated with polarization reversal in the ferroelectric barrier layer. Here we predict that a FTJ with a…
I analyze electron transport through a Y-junction formed by helical edge states of a two-dimensional topological insulator (2DTI), focusing on the strongly interacting regime. An experimentally motivated device geometry and a…
The results of scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying bismuth selenide ($Bi_2Se_3$) samples are reported. Asymmetry in tunneling currents with respect to the change in the direction of…
In most topological insulators, the valence and conduction band appear in reverse or inverted order compared to an equivalent insulator with isolated atoms. Here, we explore a different route towards topologically nontrivial states that may…
Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic…
Polar metals, materials in which electric polarisation and metallicity coexist, are exceptionally rare because itinerant electrons screen long-range dipoles and favour centrosymmetric structures. Engineering polar textures in a conducting…
The magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies…
It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the…