English

Study Of Surface Spin-Polarized Electron Accumulation In Topological Insulators Using Scanning Tunneling Microscopy

Mesoscale and Nanoscale Physics 2019-11-04 v1

Abstract

The results of scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying bismuth selenide (Bi2Se3Bi_2Se_3) samples are reported. Asymmetry in tunneling currents with respect to the change in the direction of bias currents through Bi2Se3Bi_2Se_3 samples has been observed. It is argued that this asymmetry is the manifestation of surface spin-polarized electron accumulation caused by the ninety-degree electron spin-momentum locking in the topologically protected surface current mode. It is demonstrated that the manifestation of surface spin-polarized electron accumulation is enhanced by tin doping of Bi2Se3Bi_2Se_3 samples. Furthermore, the appearance of spin-dependent density of states in current carrying Bi2Se3Bi_2Se_3 samples has also been observed.

Keywords

Cite

@article{arxiv.1911.00162,
  title  = {Study Of Surface Spin-Polarized Electron Accumulation In Topological Insulators Using Scanning Tunneling Microscopy},
  author = {S. Tyagi and M. Dreyer and D. Bowen and D. Hinkel and P. J. Taylor and A. L. Friedman and R. E. Butera and C. Krafft and I. Mayergoyz},
  journal= {arXiv preprint arXiv:1911.00162},
  year   = {2019}
}