English

Experimental detection of surface spin-polarized electron accumulation in topological insulators using scanning tunneling microscopy

Mesoscale and Nanoscale Physics 2020-04-08 v1

Abstract

Spin-momentum locking in the surface mode of topological insulators (TI) leads to the surface accumulation of spin-polarized electrons caused by bias current flows through TI samples. Here, we demonstrate that scanning tunneling microscopy can be used to sense this surface spin-polarized electron accumulation. We present experimental results of this sensing for Sn-doped Bi2_2Se3_3 samples by employing Fe-coated W tips as well as non-magnetic W tips. We observe a linear increase in the spin-accumulation as a function of bias current through TI samples.

Keywords

Cite

@article{arxiv.2004.03563,
  title  = {Experimental detection of surface spin-polarized electron accumulation in topological insulators using scanning tunneling microscopy},
  author = {S. Tyagi and M. Dreyer and D. Bowen and D. Hinkel and P. J. Taylor and A. L. Friedman and R. E. Butera and C. Krafft and I. Mayergoyz},
  journal= {arXiv preprint arXiv:2004.03563},
  year   = {2020}
}