Related papers: Four-state nanomagnetic logic using multiferroics
Composite multiferroics consisting of a ferroelectric material interfaced with a ferromagnetic material can function above room temperature and exhibit improved magnetoelectric (ME) coupling compared to single-phase multiferroic materials,…
We demonstrate the simultaneous generation of second, third, and fourth harmonic from a single dielectric Bismuth Ferrite nanoparticle excited by a telecom fiber laser at 1560 nm. We first characterize the signals associated with different…
Impurities hosted in semiconducting solid matrices represent an extensively studied platform for quantum computing applications. In this scenario, the so-called flip-flop qubit emerges as a convenient choice for scalable implementations in…
NOR gate response in a double quantum ring, where each ring is threaded by a magnetic flux $\phi$, is investigated. The double quantum ring is sandwiched symmetrically between two semi-infinite one-dimensional metallic electrodes and two…
We investigate the dynamic magnetic response of ferromagnetic flexible NiFe/Ta and FeCuNbSiB/Ta multilayers under external stress. We explore the possibility of handling magnetic anisotropy and dynamic magnetic response of flexible…
A heat-assisted multiferroic solid-state memory design is proposed and analysed, based on a PbNbZrSnTiO3 antiferroelectric substrate and Ni81Fe19 magnetic free layer. Information is stored as magnetisation direction in the free layer of a…
Stateful logic is a promising processing-in-memory (PIM) paradigm to perform logic operations using emerging nonvolatile memory cells. While most stateful logic circuits to date focused on technologies such as resistive RAM, we propose two…
This letter reports on the realization of logic circuits employing solution-processed networks of single-walled carbon nanotubes. We constructed basic logic gates (inverter, NAND and NOR) with n- and p-type field-effect transistors…
Steep-slope $\beta$-Ga$_2$O$_3$ nano-membrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in gate dielectric stack. Subthreshold slope less than 60 mV/dec at room…
Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching…
We discuss a possibility of implementing a universal quantum XOR gate, by using two coupled quantum dots subjected to external magnetic fields that are parallel and slightly different. We consider this system in two different field…
We report ultra-low-temperature $^{23}$Na NMR measurements on the Ising triangular lattice antiferromagnet Na$_2$BaCo(PO$_4$)$_2$, which precisely resolve the phase diagram under magnetic field applied along the crystalline $c$ axis. With…
We examine spin dependent transport in a quantum interferometer composed of magnetic atomic sites based on transfer matrix formalism. The interferometer, threaded by a magnetic flux $\phi$, is symmetrically attached to two semi-infinite…
Spin waves (SWs) have been considered a promising candidate for encoding information with lower power consumption. Here, we propose the dual function SW logic gates based on the electric field controlling the SW propagation in the Fe film…
The primary impediment to continued improvement of charge-based electronics is the excessive energy dissipation incurred in switching a bit of information. With suitable choice of materials, devices made of multiferroic composites, i.e.,…
The need for increasingly powerful computing hardware has spawned many ideas stipulating, primarily, the replacement of traditional transistors with alternate "switches" that dissipate miniscule amounts of energy when they switch and…
Quantum computation requires qubits that can be coupled and realized in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates \cite{DiVincenzo2000, Loss1998}. Strong effort across several fields have…
Demonstration of ultra-low energy switching mechanisms is an imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) orders and their manipulation promises an ideal combination of state variables…
Stateful logic is a digital processing-in-memory technique that could address von Neumann memory bottleneck challenges while maintaining backward compatibility with standard von Neumann architectures. In stateful logic, memory cells are…
The micromagnetic distribution in a dielectric nanoparticle is theoretically considered. It is shown that the existence of inhomogeneous magnetoelectric interaction in magnetic dielectrics provides the possibility to stabilize the vortex…