Related papers: Four-state nanomagnetic logic using multiferroics
A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is…
When fabricating magnetic memories, one of the main challenges is to maintain the bit stability while downscaling. Indeed, for magnetic volumes of a few thousand nm3, the energy barrier between magnetic configurations becomes comparable to…
Designing two-dimensional (2D) materials with magnetic and topological properties has continuously attracted intense interest in fundamental science and potential applications. Here, on the basis of first-principles calculations, we predict…
Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the…
Switching the magnetization of a shape-anisotropic 2-phase multiferroic nanomagnet with voltage-generated stress is known to dissipate very little energy ($<$ 1 aJ for a switching time of $\sim$0.5 ns) at 0 K temperature. Here, we show by…
We report a comprehensive investigation of the quadruple perovskite Ba$_4$NaRu$_3$O$_{12}$, in which we discover a robust spin-lattice coupled ground state characterized by a long-range antiferromagnetic ordering at $T_N \sim$ 257 K. The…
The multi-layer $S={1\over 2}$ square lattice Heisenberg antiferromagnet with up to 6 layers is studied via various series expansions. For the systems with an odd number of coupled planes, the ground-state energy, staggered magnetization,…
Synthesis of quaternary quantum circuits involves basic quaternary gates and logic operations in the quaternary quantum domain. In this paper, we propose new projection operations and quaternary logic gates for synthesizing quaternary logic…
Based on density functional theory calculations, we elucidated the origin of multifunctional properties for cubic antiperovskites with noncollinear magnetic ground states, which can be attributed to strong isotropic and anisotropic…
We use density functional theory to investigate the possibility of polar and multiferroic states in free-standing, perovskite-based nanodots at their limit of miniaturization: single unit cell with termination to allow centrosymmetry. We…
Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to…
CeRh$_3$Si$_2$ has been reported to exhibit metamagnetic transitions below 5~K, a giant crystal field splitting, and anisotropic magnetic properties from single crystal magnetization and heat capacity measurements. Here we report results of…
Multi-Valued Logic (MVL) has more than one logic level defined to represent data whereas binary logic has 2 logic levels. It has been shown that the MVL circuits use the circuit resources more effectively at different voltage levels with…
Using Landau-Ginzburg-Devonshire theory we study the complex interplay between structural antiferrodistortive order parameter (oxygen octahedron rotations), polarization and magnetization in EuxSr1-xTiO3 nanotubes and nanowires. We…
The prospect of all electrically controlled writing of ferromagnetic bits is highly desirable for developing scalable and energy-efficient spintronics devices. In the present work, we perform micromagnetic simulations to investigate the…
Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two…
The XOR Boolean logic gate is widely used in many applications such as encryption (XOR ciphers), binary addition (half- and full-adders), error detection (parity bits), etc. but is challenging to construct because of its demanding…
Nanomechanical computers promise a greatly improved energetic efficiency compared to their electrical counterparts. However, progress towards this goal is hindered by a lack of modular components, such as logic gates or transistors, and…
We show how nanostructuring of a metallic gate on a field-effect transistor (FET) can lead to a macroscopic, robust and voltage controlled quantum state in the electron channel of a FET. A chain of triple quantum dot molecules created by…
Multiferroic devices hold profound promise for ultra-low energy computing in beyond Moore's law era. The magnetization of a magnetostrictive shape-anisotropic single-domain nanomagnet strain-coupled with a piezoelectric layer in a…