Related papers: Four-state nanomagnetic logic using multiferroics
In a two-dimensional arrangement of closely spaced elliptical nanomagnets with in-plane magnetic anisotropy, whose major axes are aligned along columns and minor axes along rows, dipole coupling will make the magnetic ordering…
We use the many techniques of alloy theory to study antiferromagnetic NiO, considered as an alloy of spin-up and spin-down Ni atoms. The questions are: the true antiferromagnetic ground state and the possibility of obtaining ferrimagnetic…
The rise of electron spin qubit architectures for quantum computing processors has led to a strong interest in designing and integrating ferromagnets to induce stray magnetic fields for electron dipole spin resonance (EDSR). The integration…
Quantum computation using electron spins in three coupled dot with different size is proposed. By using the energy selectivity of both photon assisted tunneling and spin rotation of electrons, logic gates are realized by static and…
We report the experimental demonstration of a controlled-NOT (CNOT) quantum logic gate between motional and internal state qubits of a single ion where, as opposed to previously demonstrated gates, the conditional dynamics depends on the…
Rotating the magnetization of a shape anisotropic magnetostrictive nanomagnet with voltage-generated stress/strain dissipates much less energy than most other magnetization rotation schemes, but its application to writing bits in…
Combining pairs of ferromagnetic metals with different signs of scattering anisotropies, let us independently invert the magnetoresistance and the direction of current-driven switching in ferromagnetic/non-magnetic/ferromagnetic metal…
Monolithic three-dimensional integration of memory and logic circuits could dramatically improve performance and energy efficiency of computing systems. Some conventional and emerging memories are suitable for vertical integration,…
Spin torque majority gates are modeled and several regimes of magnetization switching (some leading to failure) are discovered. The switching speed and noise margins are determined for STMGs and an adder based on it. With switching time of…
New computing technologies are being sought near the end of CMOS transistor scaling, meanwhile superconducting digital, i.e., single-flux quantum (SFQ), logic allows incredibly efficient gates which are relevant to the impending transition.…
We present a systematic approach to implementation of basic quantum logic gates operating on polar molecules in pendular states as qubits for a quantum computer. A static electric field prevents quenching of the dipole moments by rotation,…
Prospective spintronic memory and logic devices will benefit from the negligible stray field and ultrafast magnetic dynamics inherent to antiferromagnets [1]. However, realizing isothermal, nonvolatile, and deterministic switching of…
Exciton-polaritons provide a great platform for developing ultrafast all-optical logic gates for quantum and optical chips. However, progress toward practical polariton logic remains limited due to incomplete logical functionality on a…
Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET architecture. The significantly higher electron mobility of…
An all-optical atomic Controlled-NOT (CNOT)/polarization gate operation is demonstrated with low light intensities in a room-temperature atomic medium. Using a Polarization-Selective-Kerr-Phase-Shift (PSKPS) technique, a $\pi$ phase shift…
All Spin Logic gates employ multiple nano-magnets interacting through spin-torque using non-magnetic channels. Compactness, non-volatility and ultra-low voltage operation are some of the attractive features of ASL, while, low…
Electrically manipulating the quantum properties of nano-objects, such as atoms or molecules, is typically done using scanning tunnelling microscopes and lateral junctions. The resulting nanotransport path is well established in these model…
The application of gate voltages in heavy metal/ferromagnet/Oxide multilayer stacks has been identified as one possible candidate to manipulate their anisotropy at will. However, this method has proven to show a wide variety of behaviours…
Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature with a laser scribing process. The neuron transistors are composed of a bottom ITO floating gate and multiples of two…
Topological edge states are an attractive starting point for post-CMOS device concepts, but turning them into elementary logic still requires simple architectures with a clear physical mechanism. Here we investigate binary logic in…