English

NOR gate response in a double quantum ring: An exact result

Mesoscale and Nanoscale Physics 2009-11-20 v1 Materials Science

Abstract

NOR gate response in a double quantum ring, where each ring is threaded by a magnetic flux ϕ\phi, is investigated. The double quantum ring is sandwiched symmetrically between two semi-infinite one-dimensional metallic electrodes and two gate voltages, namely, VaV_a and VbV_b, are applied, respectively, in lower arms of the two rings those are treated as the two inputs of the NOR gate. A simple tight-binding model is used to describe the system and all the calculations are done through the Green's function formalism. Here we exactly calculate the conductance-energy and current-voltage characteristics as functions of the ring-to-electrode coupling strengths, magnetic flux and gate voltages. Our numerical study predicts that, for a typical value of the magnetic flux ϕ=ϕ0/2\phi=\phi_0/2 (ϕ0=ch/e\phi_0=ch/e, the elementary flux-quantum), a high output current (1) (in the logical sense) appears if both the inputs to the gate are low (0), while if one or both are high (1), a low output current (0) results. It clearly demonstrates the NOR gate behavior and this aspect may be utilized in designing an electronic logic gate.

Cite

@article{arxiv.0911.1903,
  title  = {NOR gate response in a double quantum ring: An exact result},
  author = {Santanu K. Maiti},
  journal= {arXiv preprint arXiv:0911.1903},
  year   = {2009}
}

Comments

8 pages, 5 figures

R2 v1 2026-06-21T14:09:43.639Z