Related papers: Memory-bit selective recording in vortex-core cros…
Nowadays a bit is no longer a mere abstraction but a physical quantity whose manipulation governs both operation of modern technologies and theoretical frontiers of fundamental science. In this work we propose a setup in which the memory…
The possibility of in-memory computing with volatile memristive devices, namely, memristors requiring a power source to sustain their memory, is demonstrated. We have adopted a hysteretic graphene-based field emission structure as a…
We present a multiscale simulation framework to compute the current vs. voltage (I-V ) characteristics of metal/oxide/metal structures building the core of conductive bridging random access memory (CBRAM) cells and to shed light on their…
Vanadium dioxide (VO2) is a phase change material that can reversibly change between high and low resistivity states through electronic and structural phase transitions. Thus far, VO2 memory devices have essentially been volatile at room…
Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory…
An ultra fast bit addressing scheme for magnetic random access memories (MRAM) in a crossed wire geometry is proposed. In the addressing scheme a word of cells is programmed simultaneously by sub nanosecond field pulses making use of the…
DRAM-based main memory and its associated components increasingly account for a significant portion of application performance bottlenecks and power budget demands inside the computing ecosystem. To alleviate the problems of storage density…
Conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence, because much of the power and energy is consumed by constant data transfers between…
The switching process of the vortex core in a Permalloy nanodisk affected by a rotating magnetic field is studied theoretically. A detailed description of magnetization dynamics is obtained by micromagnetic simulations.
Memory has always been a building block element for information technology. Emerging technologies such as artificial intelligence, big data, the internet of things, etc., require a novel kind of memory technology that can be energy…
Vortices are topological objects representing the circular motion of a fluid. With their additional degree of freedom, the 'vorticity', they have been widely investigated in many physical systems and different materials for fundamental…
PCM is a popular backing memory for DRAM main memory in tiered memory systems. PCM has asymmetric access energy; writes dominate reads. MLC asymmetry can vary by an order of magnitude. Many schemes have been developed to take advantage of…
In a vortex-state magnetic nano-disk, the static magnetization is curling in the plane, except in the core region where it is pointing out-of-plane, either up or down leading to two possible stable states of opposite core polarity p.…
The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited…
Ferroelectrics offer a promising materials platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET…
Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…
Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs…
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…
We demonstrate approximate storage based on NAND-like spin-orbit torque (SOT) MRAM, through "device-modeling-architecture" explorations. We experimentally achieve down to 1E-5 level selectivity. Selectivity and low-power solutions are…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…