Related papers: Memory-bit selective recording in vortex-core cros…
Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a…
Topological magnetic textures such as vortex cores or skyrmions are key candidates for non-volatile information processing. This exploits the texture movement by current pulses that is typically opposed by pinning. A detailed understanding…
Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…
Processing in memory (PiM) represents a promising computing paradigm to enhance performance of numerous data-intensive applications. Variants performing computing directly in emerging nonvolatile memories can deliver very high energy…
Valley-spin hall (VSH) effect in monolayer WSe2 has been shown to exhibit highly beneficial features for nonvolatile memory (NVM) design. Key advantages of VSH-based magnetic random-access memory (VSH-MRAM) over spin orbit torque (SOT)-MRAM…
Memristive devices are commonly benchmarked by the multi-level programmability of their resistance states. Neural networks utilizing memristor crossbar arrays as synaptic layers largely rely on this feature. However, the dynamical…
In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the high and low resistance states of the graphene working…
Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest…
This paper presents physical modeling and benchmarking for two-terminal spin-orbit torque magnetic random-access memory (2T-SOT-MRAM). The results indicate that the common SOT materials that provide only in-plane torque can provide little…
Stateful logic is a promising processing-in-memory (PIM) paradigm to perform logic operations using emerging nonvolatile memory cells. While most stateful logic circuits to date focused on technologies such as resistive RAM, we propose two…
In this work, we propose valley-coupled spin-hall memories (VSH-MRAMs) based on monolayer WSe2. The key features of the proposed memories are (a) the ability to switch magnets with perpendicular magnetic anisotropy (PMA) via VSH effect and…
The necessity of having an electronic device working in relevant biological time scales with a small footprint boosted the research of a new class of emerging memories. Ag-based volatile resistive switching memories (RRAMs) feature a…
Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for…
Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however…
Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such…
Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory…
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…
The switching of a vortex core of a single disk in an array of a multilayer system is investigated by micromagnetic simulation. We found that the perpendicular uniaxial anisotropy (PUA) decreases the frequencies of the azimuthal mode in…
Voltage-controlled magnetoresistive random access memory (VC-MRAM) based on voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a promising ultimate non-volatile memory with ultralow power consumption. However, the…
Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable…