Related papers: Memory-bit selective recording in vortex-core cros…
A magnetic nanoparticle in a vortex state is a promising candidate for the information storage. One bit of information corresponds to the upward or downward magnetization of the vortex core (vortex polarity). Generic properties of the…
The magnetic vortex core in a nanodot can be switched by an alternating transversal magnetic field. We propose a simple collective coordinate model which describes comprehensive vortex core dynamics, including resonant behavior, weakly…
A random access memory (RAM) uses n bits to randomly address N=2^n distinct memory cells. A quantum random access memory (qRAM) uses n qubits to address any quantum superposition of N memory cells. We present an architecture that…
A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…
Micron-sized magnetic platelets in the flux closed vortex state are characterized by an in-plane curling magnetization and a nanometer-sized perpendicularly magnetized vortex core. Having the simplest non-trivial configuration, these…
Approximate computing (AC) leverages the inherent error resilience and is used in many big-data applications from various domains such as multimedia, computer vision, signal processing, and machine learning to improve systems performance…
Electric control of magnetic vortex dynamics in a reproducible way and on an ultrafast time scale is key element in the quest for efficient spintronic devices with low-energy consumption. To be useful the control scheme should ideally be…
Rapid progress in information technologies has spurred the need for innovative memory concepts, for which advanced data-processing methods and tailor-made materials are required. Here we introduce a previously unexplored nanoscale magnetic…
Magnetic vortices in soft ferromagnetic nano-disks have been extensively studied for at least several decades both for their fundamental (as a "live" macroscopic realization of a field theory model of an elementary particle) as well as…
We show how a single flux quantum can be effectively manipulated in a superconducting film with a matrix of blind holes. Such a sample can serve as a basic memory element, where the position of the vortex in a [k x l] matrix of pinning…
A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…
As an emerging post-CMOS Field Effect Transistor, Magneto-Electric FETs (MEFETs) offer compelling design characteristics for logic and memory applications, such as high-speed switching, low power consumption, and non-volatility. In this…
The lack of dense random-access memory is one of the main obstacles to the development of digital superconducting computers. It has been suggested that AVRAM cells, based on the storage of a single Abrikosov vortex, the smallest quantized…
We propose non-volatile memory (NVM) designs based on Piezoelectric Strain FET (PeFET) utilizing a piezoelectric/ferroelectric (PE/FE such as PZT) coupled with 2D Transition Metal Dichalcogenide (2D-TMD such as MoS2) transistor. The…
At the end of Silicon roadmap, keeping the leakage power in tolerable limit and bridging the bandwidth gap between processor and memory have become some of the biggest challenges. Several promising Non-Volatile Memories (NVMs) such as,…
Photonic Random-Access Memories (P-RAM) are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links. Emerging Phase Change Materials (PCMs) have been showed…
Voltage driven magneto-electric (ME) switching of ferro-magnets has shown potential for future low-energy spintronic memories. In this paper, we first analyze two different ME devices viz. ME-MTJ and ME-XNOR device with respect to…
Cache serves as a temporary data memory module in many general-purpose processors and domain-specific accelerators. Its density, power, speed, and reliability play a critical role in enhancing the overall system performance and quality of…
Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of…
Non-Volatile Random Access Memory (NVRAM) is a novel type of hardware that combines the benefits of traditional persistent memory (persistency of data over hardware failures) and DRAM (fast random access). In this work, we describe an…