Related papers: Reverse Schottky-Asymmetry Spin Current Detectors
We report an extensive study of the noncentrosymmetric half-Heusler superconductor YPtBi, revealing an unusual relation between bulk superconductivity and the possible appearance of surface superconductivity on the (111) oriented surface,…
Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of…
The breaking of spatial inversion symmetry in condensed matter gives rise to intriguing physical properties, such as ferroelectricity, piezoelectricity, spin-momentum locking, and nonreciprocal responses. Here we propose that a…
We theoretically study nonequilibrium spin transport in a superconducting wire connected by tunnel junctions to two ferromagnetic metal wires, each of which serves as an injector or detector of spin-polarized electron current. We present a…
We propose to use the lateral interface between two regions with different strengths of the spin-orbit interaction(s) to spin-polarize the electrons in gated two dimensional semiconductor heterostructures. For a beam with a non zero angle…
We propose an experiment-based strategy for finding new high transition temperature superconductors that is based on the well-established spin fluctuation magnetic gateway to superconductivity in which the attractive quasiparticle…
In view of a study on spin-polarized photodiodes, the helicity-dependent photocurrent in a Fe/x-AlOx/p-GaAs Schottky diode is measured at room temperature by illuminating a circularly polarized light beam (785 nm) either horizontally on the…
Nonreciprocal charge transport in solids, where resistance is different between rightward and leftward currents, is a key function of rectifying devices in the modern electronics, as exemplified by $p$-$n$ semiconductor junctions. Recently,…
Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO2) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field…
The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular…
We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and…
Complete suppression of the native n-type Schottky barrier is demonstrated in Al/InGaAs(001) junctions grown by molecular-beam-epitaxy. This result was achieved by the insertion of Si bilayers at the metal-semiconductor interface allowing…
We study ballistic transport through semiconductor quantum point contact systems under different confinement geometries and applied fields. In particular, we investigate how the {\em lateral} spin-orbit coupling, introduced by asymmetric…
We studied the magnetization reversal rates of thermally assisted spin transfer torque switching in a ferromagnetically coupled synthetic free layer theoretically. By solving the Fokker-Planck equation, we obtained the analytical expression…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
We investigate electronic thermal rectification in ferromagnetic insulator-based superconducting tunnel junctions. Ferromagnetic insulators coupled to superconductors are known to induce sizable spin splitting in the superconducting density…
We measured the rectification of an ac voltage in a structure of superconducting circularly-asymmetric aluminum rings in series, permeated with a magnetic flux and biased with a low-frequency alternating current (without a dc component).…
We develop a new theoretical approach for modelling a wide range of semiconductor-superconductor structures with arbitrary potential barriers and a spatially-dependent superconducting order parameter. We demonstrate asymmetry in the…
Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic…
Unusual features in the bias dependence of spin transport are observed in a Co/Au/NiFe spin valve fabricated on a highly textured Cu(100)/Si(100) Schottky interface, exploiting the local probing capabilities of a Ballistic electron magnetic…