Andreev reflection in engineered Al/Si/InGaAs(001) junctions
Abstract
Complete suppression of the native n-type Schottky barrier is demonstrated in Al/InGaAs(001) junctions grown by molecular-beam-epitaxy. This result was achieved by the insertion of Si bilayers at the metal-semiconductor interface allowing the realization of truly Ohmic non-alloyed contacts in low-doped and low-In content InGaAs/Si/Al junctions. It is shown that this technique is ideally suited for the fabrication of high-transparency superconductor-semiconductor junctions. To this end magnetotransport characterization of Al/Si/InGaAs low-n-doped single junctions below the Al critical temperature is presented. Our measurements show Andreev-reflection dominated transport corresponding to junction transparency close to the theoretical limit due to Fermi-velocity mismatch
Cite
@article{arxiv.cond-mat/9904328,
title = {Andreev reflection in engineered Al/Si/InGaAs(001) junctions},
author = {S. De Franceschi and F. Giazotto and F. Beltram and L. Sorba and M. Lazzarino and A. Franciosi},
journal= {arXiv preprint arXiv:cond-mat/9904328},
year = {2007}
}
Comments
9 pages, 3 figures