Andreev-reflection dominated transport is demonstrated in Al/n-In0.38Ga0.62As superconductor-semiconductor junctions grown by molecular beam epitaxy on GaAs(001). High junction transparency was achieved in low-doped devices by exploiting Si interface bilayers to suppress the native Schottky barrier. It is argued that this technique is ideally suited for the fabrication of ballistic transport hybrid microstructures.
@article{arxiv.cond-mat/9811338,
title = {Andreev reflection in Si-engineered Al/InGaAs hybrid junctions},
author = {Silvano De Franceschi and Francesco Giazotto and Fabio Beltram and Lucia Sorba and Marco Lazzarino and Alfonso Franciosi},
journal= {arXiv preprint arXiv:cond-mat/9811338},
year = {2009}
}
Comments
9 REVTEX pages + 3 postscript figures, to be published in APL 73, (28dec98)