Related papers: Reverse Schottky-Asymmetry Spin Current Detectors
We demonstrate that spin PN junctions-magnetic semiconductor homojunctions with spin splitting-induced band offsets-fundamentally redefine carrier transport via spin-dependent recom bination probabilities. By integrating this mechanism into…
Efficient and versatile spin-to-charge current conversion is crucial for the development of spintronic applications, which strongly rely on the ability to electrically generate and detect spin currents. In this context, the spin Hall effect…
Two different ferroelectric materials, Sr$_{0.95}$Ba$_{0.05}$TiO$_3$ and Sr$_{0.985}$Ca$_{0.015}$TiO$_3$, can be turned into polar metals with broken centrosymmetry via electron doping. Systematic substitution of Nb$^{5+}$ for Ti$^{4+}$ has…
Spin semimetals are a recently discovered new class of spintronic materials, which exhibit a band gap in one spin channel while a semimetallic feature in the other and thus allows for tunable spin transport. Here, we present experimental…
We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/$n^{+}$-Si contact at room temperature. Under the application of a…
The ESR response from highly metal-semiconductor(M-SC) separated SWCNTs for temperatures T between 0.39 and 200 K is characteristically different for the two systems. The signal originates from defect spins but interaction with free…
Analyzing spin transport of quasi-2D electrons gas moving through a semiconductor wave guide subject to a sectionally homogeneous tilted magnetic field, we found well-defined selection rules for resonant and antiresonant spin carrier…
We find efficient spin transport in Si at room temperature in lateral spin valves (LSVs). When the crystal orientation of the spin-transport channel in LSVs is changed from $\langle$110$\rangle$, which is a conventional cleavage direction,…
A caloritronic device setup is proposed that harnesses the intrinsic spin-valley locking of two-dimensional honeycomb lattices with graphene-like valleys, for instance, silicene and stanene. Combining first-principles and analytic…
An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport. The Ni/Au-AlN SBD features a low ideality factor n of 3.3 and an effective Schottky…
Tunneling transport across the p-n-p junction of Weyl semimetal with tilted energy dispersion is investigated. We report that the electrons around different valleys experience opposite direction refractions at the barrier interface when the…
We report on the experimental observation of thermoelectric currents in superconductor-ferromagnet tunnel junctions in high magnetic fields. The thermoelectric signals are due to a spin-dependent lifting of particle-hole symmetry, and are…
Coherent electron cooling is a promising technique to cool high-intensity hadron bunches by imprinting the noise in the hadron beam on a beam of electrons, amplifying the electron density modulations, and using them to apply cooling kicks…
Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is…
We develop a Monte Carlo model to study injection of spin-polarized electrons through a Schottky barrier from a ferromagnetic metal contact into a non-magnetic low-dimensional semiconductor structure. Both mechanisms of thermionic emission…
The contact issue for two-dimensional (2D) materials-based field-effect transistors (FETs) has drawn enormous attention in recent years. Although ohmic behavior is achieved at room temperature, the drain current of 2DFETs shifts from ohmic…
The coherent mixing of the current states in the superconducting weak link subject to a Josephson phase difference $\phi$ and subject to an external transport current in the banks is one of the aims of this work. At $\phi=\pi $ the nonlocal…
It has recently been proposed and experimentally demonstrated that it is possible to generate large thermoelectric effects in ferromagnet/superconductor structures due to a spin-dependent particle-hole asymmetry. Here, we theoretically show…
Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical…
We show that spin polarization of electrons in nonmagnetic semiconductors near specially tailored ferromagnet-semiconductor junctions can achieve 100%. This effect is realized even at moderate spin injection coefficients of the contact when…