Related papers: Spin Hall effect transistor
We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with…
We propose a resonant spin-field-effect transistor for chiral spin-resolved edge states in the integer quantum Hall effect with Rashba spin-orbit interaction. It employs a periodic array of voltage-controlled top gates that locally modulate…
We demonstrate how the Rashba spin-orbit coupling in semiconductor heterostructures can produce and control a spin-polarized current without ferromagnetic leads. Key idea is to use spin-double refraction of an electronic beam with a nonzero…
We calculate spin Hall conductivities in the two dimensional electron systems with Rashba spin-orbit interaction. The salient feature is that, apart from the usual spin-Hall conductivity \sigma^z_{xy} which corresponds to the induction of…
Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few…
Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin…
Recently spin-transistors receive considerable attention as a highly-functional building block of future integrated circuits. In order to realize spin-transistors, it is essential that technology of efficient spin injection/detection for…
We propose and analyze a four-terminal metal-semiconductor device that uses hot-electron transport through thin ferromagnetic films to inject and detect a charge-coupled spin current transported through the conduction band of an arbitrary…
We study a two-dimensional electron system in the presence of spin-orbit interaction. It is shown analytically that the spin-orbit interaction acts as a transversal effective electric field, whose orientation depends on the sign of the…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…
Injecting spins into a semiconductor channel and transforming the spin information into a significant electrical output signal is a long standing problem in spintronics. Actually, this is the prerequisite of several concepts of spin…
It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the…
Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It…
In this paper, we present the theoretical predication of a thermospin Hall effect, in which a transverse spin current can be generated in semiconductors in the presence of spin-orbit coupling by a frequency-dependent longitudinal…
An analytical expression is derived for the conductance modulation of a ballistic two dimensional Datta-Das Spin Field Effect Transistor (SPINFET) as a function of gate voltage. Using this expression, we show that the recently observed…
It is proposed that the new generation of spintronics should be ideally massless and dissipationless for the realization of ultra-fast and ultra-low-power spintronic devices. We demonstrate that the spin-gapless materials with linear energy…
We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a…
Integrating semiconducting and magnetic materials could combine transistor-like operation with nonvolatility and enable architectures such as logic-in-memory. Here, we employ correlated electrical transport and scanning nitrogen-vacancy…
When charge current passes through a normal metal that exhibits spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of…
We studied the spin-dependent quantum transport properties using a simple modelling of a Datta-Das spin transistor. We refine previous results by accounting the propagation medium changes of opacity felt by itinerant electrons, when the…