Related papers: High-temperature spin polarization of high-mobilit…
We have succeeded in growing ferromagnetic metals (Co, Fe, and NiFe)/ Al2O3/ AlGaAs heterostructures with homogeneous and flat interfaces. The electro-luminescence (EL) from the light emitting diode (LED) consisting of the…
The recent development of MBE techniques for growth of III-V ferromagnetic semiconductors has created materials with exceptional promise in spintronics, i.e. electronics that exploit carrier spin polarization. Among the most carefully…
Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in ZnMnO thin films grown on Al2O3 and MgO substrates. The magnetic properties depended on the exact Mn…
We demonstrate electrical control of ferromagnetism in field-effect transistors with a trilayer quantum well (QW) channel containing an ultrathin n-type ferromagnetic semiconductor (In,Fe)As layer. A gate voltage is applied to control the…
We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we…
We present a detailed study, within the mean-field approximation, of an impurity band model for III-V diluted magnetic semiconductors. Such a model should be relevant at low carrier densities, below and near the metal-insulator transition.…
By means of first-principles simulations, we unambiguously show that improper ferroelectricity in magnetite in the low-temperature insulating phase is driven by charge-ordering. An accurate comparison between monoclinic ferroelectric Cc and…
It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the…
We discuss transport through an interferometer formed by helical edge states of the quantum spin Hall insulator. Focusing on effects induced by a strong magnetic impurity placed in one of the arms of interferometer, we consider the…
A self-consistent calculation of the density of states and the spectral density function is performed in a two-dimensional spin-polarized hole system based on a multiple-scattering approximation. Using parameters corresponding to GaMnAs…
Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensional hole gas structure of strained Ge quantum wells serves as…
The current status of research on the carrier-mediated ferromagnetism in tetrahedrally coordinated semiconductors is briefly reviewed. The experimental results for III-V semiconductors, where Mn atoms introduce both spins and holes, are…
We show theoretically that the magnetic ions, randomly distributed in a two-dimensional (2D) semiconductor system, can generate a ferromagnetic long-range order via the RKKY interaction. The main physical reason is the discrete (rather than…
Due to the competition between spatial and magnetic confinement, the density of states of a quasi two-dimensional system deviates from the ideal step-like form both quantitatively and qualitatively. We study how this affects the…
Recent experiments [1] suggest that the ferromagnetism (FM) in GaAs: Mn is determined by the impurity band rather than holes in the valence band. We discuss here the physical mechanism of FM mediated by the carriers in impurity band, where…
We demonstrate the epitaxial growth of optical-quality electrically-gated III-V ferromagnetic quantum structures. Photoluminescence spectroscopy reveals that initially unpolarized photoexcited holes in a GaAs quantum well become…
We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy…
The narrow gap semiconductor FeSi owes its strong paramagnetism to electron-correlation effects. Partial Co substitution for Fe produces a spin-polarized doped semiconductor. The spin-polarization causes suppression of the metallic…
The longitudinal resistivity $\rho_{xx}$ of two-dimensional electron gases formed in wells with two subbands displays ringlike structures when plotted in a density--magnetic-field diagram, due to the crossings of spin-split Landau levels…
The resistivity model as a function of temperature and ionization energy (doping) is derived with further confinements from spin-disorder scattering in ferromagnetic phase. Magnetization and polaronic effects capture the mechanism of both…