Related papers: High-temperature spin polarization of high-mobilit…
While the helical character of the edge channels responsible for charge transport in the quantum spin Hall regime of a two-dimensional topological insulator is by now well established, an experimental confirmation that the transport in the…
The parallel field of a full spin polarization of the electron gas in a \Gamma8 conduction band of the HgTe quantum well was obtained from the magnetoresistance by three different ways in a zero and quasi-classical range of perpendicular…
Narrow-gap higher mobility semiconducting alloys In_{1-x}Mn_{x}Sb were synthesized in polycrystalline form and their magnetic and transport properties have been investigated. Ferromagnetic response in In_{0.98}Mn_{0.02}Sb was detected by…
Starting from microscopic and symmetry considerations, we derive the Hamiltonian describing the exchange interaction between the localized Mn spins and the valence band holes in $Ga_{1-x}Mn_x As$. We find that due to the strong spin-orbit…
We predict that a novel bias-voltage assisted magnetization reversal process will occur in Mn doped II-VI semiconductor quantum wells or heterojunctions with carrier induced ferromagnetism. The effect is due to strong exchange-coupling…
A systematic microscopic theory of magnetically induced ferroelectricity and lattice modulation is presented for all electron configurations of Mott-insulating transition-metal oxides. Various mechanisms of polarization are identified in…
We propose a mechanism for insulating ferromagnetism in the honeycomb Hubbard model of semiconductor moir\'e superlattices. The ferromagnetism emerges at critical charge transfer regime, stabilizing the quantum anomalous Hall state without…
The dynamics of magnetization under femtosecond optical excitation is studied in a ferromagnetic semiconductor Ga_{0.94}Mn_{0.06}As with a time-resolved magneto-optical Kerr effect measurement with two color probe beams. The transient…
The hot electron magnetotransport in a spin-valve transistor has been theoretically explored at finite temperatures. We have explored the parallel and anti-parallel collector current changing the relative spin orientation of the…
The magnetization kinetics in (Zn,Mn)Se/(Zn,Be)Se quantum wells has been studied on a ps-time scale after pulsed laser excitation. The magnetization induced by an external magnetic field is reduced by up to 30% during ~100 ps due to spin…
$Ab$ $initio$ calculations show the presence of a strong magnetoelectric interfacial coupling in CaMnO$_3$ ultra-thin film grown on a strained BaTiO$_3$ ferroelectric film. This heterostructure presents a polarization driven magnetic…
We demonstrated the control of ferromagnetism in a surface quantum well containing a 5-nm-thick n-type ferromagnetic semiconductor (In,Fe)As layer sandwiched between two InAs layers, by manipulating the carrier wavefunction. The Curie…
Thin films of the ferromagnet Fe$_2$Ge were grown via molecular beam epitaxy, and their electrical and magneto-transport properties measured for the first time. X-ray diffraction and vibrating sample magnetometry measurements confirmed the…
We investigate electronic transport through II-VI semiconductor resonant tunneling structures containing diluted magnetic impurities. Due to the exchange interaction between the conduction electrons and the impurities, there arises a giant…
In wide GaAs quantum wells where two electric subbands are occupied we apply a parallel magnetic field or increase the electron density to cause a crossing of the two $N=0$ Landau levels of these subbands and with opposite spins. Near the…
Carrier-induced ferromagnetism is investigated in a diluted ferromagnetic Kondo lattice model for several ordered impurity arrangements on square and cubic lattices, allowing for quantitative comparison with different theoretical pictures.…
Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large…
We calculate the critical density of the zero-temperature, first-order ferromagnetic phase transition in n-doped GaAs/AlGaAs quantum wells. We find that the existence of the ferromagnetic transition is dependent upon the choice of well…
The carriers in InAs-GaSb double quantum wells are hybrid ``electron-holes''. We study the magnetotransport properties of such particles using a two-component Keldysh technique, which results in a semi-analytic expression for the…
We observe that an in-plane magnetic field ($B_{||}$) can induce an order of magnitude enhancement in the low temperature ($T$) resistivity ($\rho$) of metallic 2D holes in a narrow (10nm) GaAs quantum well. Moreover, we show the first…