Related papers: Hysteresis Switching Loops in Ag-manganite memrist…
We study both theoretically and experimentally switching dynamics in surface stabilized ferroelectric liquid crystal cells with asymmetric boundary conditions. In these cells the bounding surfaces are treated differently to produce…
We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a…
The formation and dissolution of silver nanowires plays a fundamental role in a broad range of resistive switching devices, fundamentally relying on the electrochemical metallization phenomenon. It was shown, however, that resistive…
Exchange bias has been studied in a series of La2/3Ca1/3MnO3 / La1/3Ca2/3MnO3 bilayers grown on (001) SrTiO3 substrates by ozone-assisted molecular beam epitaxy. The high crystalline quality of the samples and interfaces has been verified…
We present low-temperature and high-field magnetotransport data on SrTiO3-LaAlO3 interfaces. The resistance shows hysteresis in magnetic field and a logarithmic relaxation as a function of time. Oscillations in the magnetoresistance are…
When an interacting many-body system, such as a magnet, is driven in time by an external perturbation, such as a magnetic field,the system cannot respond instantaneously due to relaxational delay. The response of such a system under a…
Exchange-coupled structures consisting of ferromagnetic and ferrimagnetic layers become technologically more and more important. We show experimentally the occurrence of completely reversible, hysteresis-free minor loops of [Co(0.2…
It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…
The kinetic theory of switching processes in crystalline ferroelectric materials under the influence of a variable external electric field is formulated. The basic equations are derived and their exact analytical solution at arbitrary…
We demonstrate that it is possible to distinguish two conductance switching mechanisms in silver sulfide devices at room temperature. Experiments were performed using a Ag$_2$S thin film deposited on a wide Ag bottom electrode, which was…
A number of memristive devices, mainly ReRAMs, have been reported to exhibit a unique non-zero crossing hysteresis attributed to the interplay of resistive and not yet fully understood `capacitive', and `inductive' effects. This work…
Dissipative phase transitions are characteristic features in open quantum systems. Key signatures are the dynamical switching between different states in the vicinity of the phase transition and the appearance of hysteresis. Here, we…
First-order irreversible phase transitions (IPT's) between an active regime and an absorbing state are studied in two models by means of both simulations and mean-field stability analysis. Hysteresis around coexistence is the result of the…
Understanding the atomic structure of magnetite-carboxylic acid interfaces is crucial for tailoring nanocomposites involving this interface. We present a Monte Carlo (MC)-based method utilizing iron oxidation state exchange to model…
In spin crossover materials, an abrupt phase transition between a low spin state and a high spin state can be driven by temperature, pressure or by light irradiation. Of a special relevance are Fe(II) based coordination polymers where, in…
We study in-plane lateral heterostructures of commensurate transition-metal dichalcogenides, such as MoS$_{2}$-WS$_{2}$ and MoSe$_{2}$-WSe$_{2}$, and find interfacial and edge states that are highly localized to these regions of the…
Hysteresis is studied in a disordered Ising model in which diffusion of antiferromagnetic bonds is allowed in addition to spin flips. Saturation behavior changes to a figure-eight loop when diffusion is introduced. The upper and lower…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
This research explores the characteristics of two CMOS-compatible RRAM cells utilizing silicon nitride as the switching material. By employing SET/RESET pulse sequences, the study successfully attains four distinct and stable resistance…
We have characterized the vertical transport properties of epitaxial layered structures composed of Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$ (PCMO) sandwiched between SrRuO$_{3}$ (SRO) bottom electrode and several kinds of top electrodes such as SRO,…