Related papers: Hysteresis Switching Loops in Ag-manganite memrist…
We have studied the magnetoresistance (MR) of thin highly oriented pyrolytic graphite mesoscopic samples without and with micro-constrictions of different widths between the voltage electrodes. The MR for fields parallel to the c-axis shows…
Contact effects in devices incorporating strongly-correlated electronic materials are comparatively unexplored. We have investigated the electrically-driven phase transition in magnetite (100) thin films by four-terminal methods. In the…
With the recent experimental verification that ferroelectric lattice distortions survive in the metallic phase of some materials, there is a desire to create devices that are both switchable and take advantage of the novel functionalities…
Finding new collective electronic states in materials is one of the fundamental goals of condensed matter physics. Atomic-scale superlattices formed from transition metal oxides are a particularly appealing hunting ground for new physics.…
Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one…
Using classical molecular dynamics simulations, we study austenite to ferrite phase transformation in iron, focusing on the role of interface morphology. We compare two different morphologies; a \textit{flat} interface in which the two…
We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage,…
We study the energy landscape of the soft-spin random field model in the mean-field limit and compute analytically the quenched complexity of the metastable states as a function of their magnetization and energy at a given external magnetic…
We investigate a magnetization-dependent voltage that appears at the interface between garnets and various metals. The voltage is even in the applied magnetic field and is dependent on the surface roughness and the pressure holding the…
We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/n-Si devices is explored using different measurement protocols. We show that…
Redox-based memristive devices are among the alternatives for the next generation of non volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing devices. It is nowadays well established that the…
Dynamic behavior of a quantum Heisenberg ferromagnet in the presence of a periodically oscillating magnetic field has been analyzed by means of the effective field theory with two spin cluster. The dynamic equation of motion has been…
Reproducible current hysteresis is observed in graphene with a back gate structure in a two-terminal configuration. By applying a back gate bias to tune the Fermi level, an opposite sequence of switching with the different charge carriers,…
Defect engineering is a key strategy to control resistive switching (RS) in oxide-based memristive devices, where oxygen vacancy (OV) dynamics governs filament formation and rupture. We investigate the effect of Ag nanoparticles (AgNPs)…
Hysteresis is studied for a two-dimensional, spin-1/2, nearest-neighbor, kinetic Ising ferromagnet in an oscillating field, using Monte Carlo simulations and analytical theory. Attention is focused on large systems and strong field…
Finite-temperature micromagnetics simulations are employed to study the magnetization-switching dynamics driven by a field applied at an angle to the long axis of an iron nanopillar. A bi-modal distribution in the switching times is…
Description of domains switching processes in crystalline ferroelectrics by means of relaxation type equations with account of variable external electric field is proposed. Exact solution of these equations in closed analytical form at…
Experimental systems with a first order phase transition will often exhibit hysteresis when out of equilibrium. If defects are present, the hysteresis loop can have different shapes: with small disorder the hysteresis loop has a macroscopic…
Metal-support interfaces fundamentally govern the catalytic performance of heterogeneous systems through complex interactions. Here, utilizing operando transmission electron microscopy, we uncovered a type of looping metal-support…
The hysteresis behaviors of anisotropic S-1 Heisenberg model have been studied within the effective field theory with two spin cluster. After giving the phase diagrams, the effect of the crystal field and anisotropy in the exchange…