Related papers: Hysteresis Switching Loops in Ag-manganite memrist…
The dielectric breakdown at metal-oxide interfaces is a critical electronic device failure mechanism. Electronic tunneling through dielectric layers is a well-accepted explanation for this phenomenon. Theoretical band alignment studies,…
The properties of Shockley-type interface states between $\pi$-conjugated organic molecular layers and metal surfaces are investigated by time-resolved two-photon photoemission experiments and density functional theory. For perylene- and…
Recent computational studies of models for manganese oxides have revealed a rich phase diagram, not anticipated in early calculations in this context performed in the 1950's and 60's. In particular, the transition between the…
Multiterminal measurements have typically been employed to examine electronic properties of strongly correlated electronic materials such as transition metal oxides without the influence of contact effects. In contrast, in this work we…
Onset and loss of synchronization in coupled oscillators are of fundamental importance in understanding emergent behavior in natural and man-made systems, which range from neural networks to power grids. We report on experiments with…
We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiO$_{\text{x}}$/Pt thin layer system.…
Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As alternative to high…
A colossal insulator-to-metal transition in high-spin pyrite phase of $MnS_{2}$ has been experimentally observed \cite{colomns2}. There are two possibilities behind this colossal insulator-to-metal transition: (1) migration of $Mn$…
Hysteresis is a general phenomenon regularly observed in measurements of various materials properties such as magnetism, elasticity, capillary pressure, adsorption, battery voltage etc. Usually, the hysteretic behaviour is an intrinsic…
Electrical switching has been observed in carefully designed metal-insulator-metal devices built at small geometries. These devices are also commonly known as memristors and consist of specific materials such as transition metal oxides,…
A practical problem for memory applications involving perpendicularly magnetized magnetic tunnel junctions is the reliability of switching characteristics at high-bias voltage. Often it has been observed that at high-bias, additional error…
While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights required for memristor modeling, extended investigations of the…
The decay of the hysteresis loop area of the system, which is obeying a site diluted kinetic Ising model, is considered by the disorder parameter using the effective field theory analysis. The exhibition focuses on the understanding of…
We report the observation of $180^o$ phase switching on silicon wafers by piezo-response force microscopy (PFM). The switching is hysteretic and shows remarkable similarities with polarization switching in ferroelectrics. This is always…
Superconductor-to-metal transition with magnetic field and gate-voltage is studied in a Josephson junction array comprising of randomly distributed lead islands on exfoliated single-layer graphene with a back-gate. The low magnetic-field…
We present a model in which metastable supercooled phase and stable equilibrium phase of vortex matter coexist in different regions of a sample. Minor hysteresis loops are calculated with the simple assumption of the two phases of vortex…
X-ray magnetic circular dichroism at the Er M4,5 edge is used to study the switching behavior of the hard ErFe2 layers in an epitaxial [ErFe2(70{\AA})/YFe2 (150{\AA})]{\times}25 exchange-spring superlattice. Magnetic hysteresis loops for…
Within the framework of Lorentz model for description of viscoelastic medium the influence of deformational defect of the shear modulus is studied on melting of ultrathin lubricant film confined between the atomically flat solid surfaces.…
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…
We experimentally investigate transport properties of a hybrid structure, which consists of a thin single crystal SnSe flake on a top of 5~$\mu$m spaced Au leads. The structure initially is in highly-conductive state, while it can be…