Related papers: Low-noise top-gate graphene transistors
We report the fabrication and characterization of a simple gate-free graphene device as a pH sensor. The graphene sheets are made by mechanical exfoliation. Platinum contact electrodes are fabricated with a mask-free process using focused…
A new type of the graphene-based three-port circulator is suggested and analysed. The cross-section of the component presents a three-layer structure consisting of a layer of silicon, of silica and of graphene. In-plane figure resembles a…
We report radio frequency (rf) electrical readout of graphene mechanical resonators. The mechanical motion is actuated and detected directly by using a vector network analyzer, employing a local gate to minimize parasitic capacitance. A…
We have investigated shot noise in graphene field effect devices in the temperature range of 4.2--30 K at low frequency ($f$ = 600--850 MHz). We find that for our graphene samples with large width over length ratio $W/L$, the Fano factor…
We study the contact resistance and the transfer characteristics of back-gated field effect transistors of mono- and bi-layer graphene. We measure specific contact resistivity of ~7kohm*um2 and ~30kohm*um2 for Ni and Ti, respectively. We…
Graphene quantum dots are attractive candidates for solid-state quantum bits. In fact, the predicted weak spin-orbit and hyperfine interaction promise spin qubits with long coherence times. Graphene quantum dot devices have been extensively…
The quantum indeterminacy caused by non-commutativity of observables at different times sets a lower bound on the voltage noise power spectrum in any conducting material. This bound is calculated explicitly in the case of monolayer…
Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current…
We study quantum tunneling through a potential barrier whose height fluctuates in time and is modeled by Gaussian white noise. We map the stochastic dynamics onto an equivalent time-independent Lindblad equation for the density matrix,…
We have investigated shot noise and conduction of graphene field effect nanoribbon devices at low temperature. By analyzing the exponential $I-V$ characteristics of our devices in the transport gap region, we found out that transport…
Telegraph noise, which originates from the switching of charge between meta-stable trapping sites, becomes increasingly important as device sizes approach the nano-scale. For charge-based quantum computing, this noise may lead to…
A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semiconductor process flows. In this paper, we present…
In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor…
The MOS devices are the basic building block of any digital and analog circuits, where silicon (Si) is the most commonly used material. The International Technology Roadmap Semiconductor (ITRS) report predicts the gate length of the MOS…
We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight binding model, we…
Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10^6 and on-state current density as high as…
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…
The enormous stiffness and low density of graphene make it an ideal material for nanoelectromechanical (NEMS) applications. We demonstrate fabrication and electrical readout of monolayer graphene resonators, and test their response to…
Graphene and few-layer graphene at high bias expose a wealth of phenomena due to the high temperatures reached. With in-situ transmission electron microscopy (TEM) we observe directly how the current modifies the structure, and vice versa.…
The measurement of the close-to-the-carrier noise of rf and microwave devices is a relevant issue in time and frequency metrology and in some fields of electronics, physics and optics. While phase noise is the main concern, amplitude noise…