Related papers: Low-noise top-gate graphene transistors
We investigate the transport properties of graphene underneath metal to reveal whether the carrier density in graphene underneath source/drain electrodes in graphene field-effect transistors is fixed. The resistance of the graphene/Ni…
We study the photoresponse of graphene field effect transistors using scanning photocurrent microscopy in near and far field configurations, and we find that the response of graphene under a source-drain bias voltage away from the contacts…
We have fabricated and measured ballistic graphene transistors with two oblique gates that can be independently biased. The gate lengths are about 38 nm and are separated by a distance of 30 nm, the tilting angle being of 45o with respect…
Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfils…
This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible…
The performance of graphene-based transistors is often limited by the large electrical resistance across the metal-graphene contact. We report an approach to achieve ultra-low resistance metal contacts to graphene transistors. Through a…
We report the first measurement of 1/f type noise associated with electronic spin transport, using single layer graphene as a prototypical material with a large and tunable Hooge parameter. We identify the presence of two contributions to…
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An…
Bilayer graphene is an attractive material that realizes high-quality two-dimensional electron gas with a controllable bandgap. By utilizing the bandgap, electrical gate tuning of the carrier is possible and formation of nanostructures such…
We report results regarding the electron transport in vertical quasi-2D layered 1T-TaS2 charge-density-wave devices. The low-frequency noise spectroscopy was used as a tool to study changes in the cross-plane electrical characteristics of…
We have investigated the statistics of low frequency noise in the tunneling current of ultrathin oxides (2.5nm-4nm) in metal oxide semiconductor capacitors as a function of the applied voltage stress. The statistical analysis includes (i)…
We present a novel and comprehensive model of 1/f noise in nanoscale graphene devices that accounts for the unusual and so far unexplained experimental characteristics. We find that the noise power spectral density versus carrier…
Low frequency noise close to the carrier remains little explored in spin torque nano oscillators. However, it is crucial to investigate as it limits the oscillator's frequency stability. This work addresses the low offset frequency flicker…
Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current…
We review thermal properties of graphene and few-layer graphene, and discuss applications of these materials in thermal management of advanced electronics. The intrinsic thermal conductivity of graphene - among the highest of known…
We report a direct measurement of the low-frequency noise spectrum in a superconducting flux qubit. Our method uses the noise sensitivity of a free-induction Ramsey interference experiment, comprising free evolution in the presence of noise…
Inelastic phonon scattering in graphene field-effect transistors (FETs) is studied by numerically solving the Boltzmann transport equation in three dimensional real and phase spaces (x, kx, ky). A kink behavior due to ambipolar transport…
Reduced graphene oxide becomes one of the most popular materials for applications in various optical, electronic and sensor devices. Even though many methods have been already reported for reduced graphene oxide synthesis, they usually rise…
High performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20nm have been fabricated by integrating a higher-k LaAlO3-based gate stack with an equivalent oxide thickness of 1.2nm. It is found that…
We develop an analytical device model for graphene bilayer field-effect transistors (GBL-FETs) with the back and top gates. The model is based on the Boltzmann equation for the electron transport and the Poisson equation in the weak…