Related papers: Electrical Detection and Magnetic-Field Control of…

The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si$_{1-x}$Ge$_x$ substrates with $x\leq 0.3$ is determined via electrically detected magnetic resonance. For highly strained epilayers,…

We demonstrate a method which can hyperpolarize both the electron and nuclear spins of 31P donors in Si at low field, where both would be essentially unpolarized in equilibrium. It is based on the selective ionization of donors in a…

We demonstrate the coherent control and electrical readout of the nuclear spins of ionized phosphorus donors in natural silicon. By combining pulsed illumination with coherent electron spin manipulation, we selectively ionize the donor…

We present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist of high-dose implanted metallic leads with a square gap,…

Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination (SDR) using microwave photoconductivity and…

We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the efficiency of exchange in imprinting spin information from the…

Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission…

Molecular spin qubits with long spin coherence time as well as non-invasive operation methods on such qubits are in high demand. It was shown that both molecular electronic and nuclear spin levels can be used as qubits. In solid state…

We demonstrate the electrical detection of pulsed X-band Electron Nuclear Double Resonance (ENDOR) in phosphorus-doped silicon at 5\,K. A pulse sequence analogous to Davies ENDOR in conventional electron spin resonance is used to measure…

Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29^Si nuclear…

A recently discovered mechanism of electric dipole spin resonance, mediated by the hyperfine interaction, is investigated experimentally and theoretically. The effect is studied using a spin-selective transition in a GaAs double quantum…

We present two strategies for performing two-qubit operations on the electron spins of an exchange-coupled pair of phosphorus donors in silicon, using the ability to set the donor nuclear spins in arbitrary states. The effective magnetic…

We present electrically detected electron nuclear double resonance measurements of the nuclear spins of ionized and neutral arsenic donors in strained silicon. In addition to a reduction of the hyperfine coupling, we find significant…

We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28Si epi-layer are used to apply electric fields. Two Stark effects are…

Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of…

We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P…

The metallic surface states of a topological insulator support helical Dirac fermions protected by topology with their spin locked perpendicular to their momentum. They can acquire mass through magnetic doping or through hybridization of…

Shifts from the expected nuclear magnetic resonance frequencies of antimony and bismuth donors in silicon of greater than a megahertz are observed in electrically detected magnetic resonance spectra. Defects created by ion implantation of…

This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which…

Transition metal defects in SiC give rise to localized electronic states that can be optically addressed in the telecom range in an industrially mature semiconductor platform. This has led to intense scrutiny of the spin and optical…