Related papers: Resonant tunneling-based spin ratchets
We investigate electronic transport through II-VI semiconductor resonant tunneling structures containing diluted magnetic impurities. Due to the exchange interaction between the conduction electrons and the impurities, there arises a giant…
We demonstrate that the combined effect of a spatially periodic potential, lateral confinement and spin-orbit interaction gives rise to a quantum ratchet mechanism for spin-polarized currents in two-dimensional coherent conductors. Upon…
A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of non-centrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave…
We investigate the possiblity of creating directed spin-polarized currents in a two-dimensional electron gas (2DEG) subject to an asymmetric magnetic field and an external adiabatic driving. We thereby generalize concepts of quantum charge…
The concept of ratchets, driven asymmetric periodic structures giving rise to directed particle flow, has recently been generalized to a quantum ratchet mechanism for spin currents mediated through spin-orbit interaction. Here we consider…
We demonstrate that the tunnel oscillations of a biased double quantum dot can be employed as driving source for a quantum ratchet. As a model, we use two capacitively coupled double quantum dots. One double dot is voltage biased and…
We study I-V characteristics of an all-II-VI semiconductor resonant tunneling diode with dilute magnetic impurities in the quantum well layer. Bound magnetic polaron states form in the vicinity of potential fluctuations at the well…
We consider the possibility to employ a quantum wire realized in a two-dimensional electron gas (2DEG) as a spin ratchet. We show that a net spin current without accompanying net charge transport can be induced in the nonlinear regime by an…
We analyze transport through both a double quantum dot and a triple quantum dot with inhomogeneous Zeeman splittings in the presence of crossed dc and ac magnetic fields. We find that strongly spin-polarized current can be achieved by…
We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an…
The driving of charge carriers confined in a quantum well lacking the center of space inversion by an alternating electric field leads to the formation of a direct electric current. We develop a microscopic theory of such a quantum ratchet…
Spintronics relies on the ability to transport and utilize the spin properties of an electron rather than its charge. We describe a spin rachet at the single-electron level that produces spin currents with no net bias or charge transport.…
We propose a device acting as a spin valve which is based on a double quantum dot structure with parallel topology. Using the exact analytical solution for the noninteracting case we argue that, at a certain constellation of system…
We analyze the charge and spin dynamics in a DC biased double quantum dot driven by crossed DC and AC magnetic fields. In this configuration, spatial delocalization due to inter-dot tunnel competes with intra-dot spin rotations induced by…
We study the spin and charge dynamics of electrons in n-doped II--VI semiconductor multiple quantum wells when one or more quantum wells are doped with Mn. The interplay between strongly nonlinear inter-well charge transport and the large…
Periodic driving of quantum dots is analyzed as a basis for developing dynamic switching devices. We study transport through periodically modulated energy levels which are coupled to leads via tunneling coefficients. Utilizing Floquet…
We have measured the low-temperature transport properties of a quantum dot formed in a one-dimensional channel. In zero magnetic field this device shows quantized ballistic conductance plateaus with resonant tunneling peaks in each…
A theory of spin-dependent electron transmission through resonant tunneling diode (RTD) grown of non-centrosymmetrical semiconductor compounds has been presented. It has been shown that RTD can be employed for injection and detection of…
We develop the concept of scattering matrix and we use it to perform stable numerical calculations of resonant tunneling of electrons through a multiple potential barrier in a semiconductor heterostructure. Electrons move in two external…
We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the…