Related papers: Excess dissipation in a single-electron box: The S…
We study a superconducting single-charge transistor, where the coherence of Cooper pair tunneling is destroyed by the coupling to a tunable dissipative environment. Sequential tunneling and cotunneling processes are analyzed to construct…
It is important to know the decoherence mechanism of a qubit based on Josephson junctions. At low temperatures, as quasiparticle concentration becomes exponentially small, one needs to consider energy transfer from tunneling electrons to…
The radio-frequency Single-Electron Box is becoming an attractive charge sensor for semiconductor-based quantum computing devices due to its high sensitivity and small footprint, which facilitates the design of highly connected qubit…
A new picture of the Josephson effect is devised. The radio-frequency (RF) signal, observed in a Josephson junction, is shown to stem from bound electrons, tunneling periodically through the insulating film. This holds also for the…
In this Letter, we study the transient electron transfer phenomena of single-electron devices with alternating external gate voltages. We obtain a high frequency limit for pumping electrons one at a time in single-electron devices. Also, we…
We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET).…
Infrared reflectivity measurements of CeSb under multi-extreme conditions (low temperatures, high pressures and high magnetic fields) were performed. A pseudo gap structure, which originates from the magnetic band folding effect,…
Due to the quantum nature of current flow in single-electron devices, new physical phenomena can manifest when probed at finite frequencies. Here, we present a semi-classical small-signal model approach to replace complex single-electron…
Overdamped stochastic systems maintained far from equilibrium can display sustained oscillations with fluctuations that decrease with the system size. The correlation time of such noisy limit cycles expressed in units of the cycle period is…
Thermoelectric effects in normal metals and superconductors are usually very small due to the presence of electron-hole symmetry. Here, we show that superconducting junctions brought out of equilibrium manifest a sizable bipolar…
We calculate the average number of electrons on a metallic single-electron-box as a function of the gate voltage for arbitrary values of the tunneling conductance. In the vicinity of the plateaus the problem is equivalent to calculating the…
We investigate a hybrid structure consisting of $20\pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby…
We have used time-dependent density functional theory to study self-irradiated Si. We calculate the electronic stopping power of Si in Si by evaluating the energy transferred to the electrons per unit path length by an ion of kinetic energy…
We present an in-depth analysis of a single-electron box (SEB) biased through a floating node technique that is common in charge-coupled devices (CCDs). The device is analyzed and characterized in the context of single-electron…
Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena due to their charge stability and robust…
We theoretically investigate the escape rate occurring via quantum tunneling in a system affected by tailored dissipation. Specifically, we study the environmental assisted quantum tunneling of the superconducting phase in a current-biased…
We consider the steady state of a one dimensional diffusive system, such as the symmetric simple exclusion process (SSEP) on a ring, driven by a battery at the origin or by a smoothly varying field along the ring. The battery appears as the…
We apply the general procedure presented by Jarzynski in [1] to the problem of dissipation in a voltage-driven single-electron box. We obtain the expression of dissipated work, and find its relation to the dissipation Q obtained in [2]. We…
We study a superconducting artificial atom which is represented by a single Josephson junction or a Josephson junction chain, capacitively coupled to a coherently driven transmission line, and which contains exactly one residual…
We present a simple low-cost electronic circuit that is able to show two different dynamical regimens with oscillations of voltages and with constant values of them. This device is designed as a negative feedback three-node network inspired…