Related papers: Excess dissipation in a single-electron box: The S…
Superconducting RF (SRF) photo-injectors are one of the most promising devices for generating continuous wave (CW) electron beams with record high brightness. Ultra-high vacuum of SRF guns provides for long lifetime of the high quantum…
Non-reciprocal devices are key components in both classical and quantum electronics. One approach to realizing passive non-reciprocal microwave devices is through capacitive coupling between external electrodes and materials exhibiting…
Bulk single crystal Molybdenum diselenide has been studied for its electronic and thermal transport properties. We perform resistivity measurements with current in-plane (CIP) and current perpendicular to plane (CPP) as a function of…
The detection efficiency and response function of a Si(Li) detector element for the SIXA spectrometer have been determined in the 500 eV to 5 keV energy range using synchrotron radiation emitted at a bending magnet of the electron storage…
The study of the response of amorphous materials to oscillatory strain is traditionally performed with many repeated cycles. We argue that it pays to consider carefully just one cycle (and may be a second), to reveal the rich physics that…
We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…
Using a quantum detector, a superconductor-insulator-superconductor junction, we probe separately the emission and absorption noise in the quantum regime of a superconducting resonant circuit at equilibrium. At low temperature the resonant…
A single-electron trap built with two Superconductor (S) - Insulator (I) - Normal (N) metal tunnel junctions and coupled to a readout SINIS-type single-electron transistor A (SET A) was studied in a photon detection regime. As a source of…
Despite wide-scale deployment of phasor measurement unit technology, locating the sources of low frequency forced oscillations in power systems is still an open research topic. The dissipating energy flow method is one source location…
We model a Superconducting Single-Electron Transistor operating by repulsive interactions. The device consists of a ring of Hubbard clusters, placed between electrodes and capacitively coupled to a gate potential. In each cluster, a pair of…
We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance…
Seebeck coefficient is a widely-studied semiconductor property. Conventional Seebeck coefficient measurements are based on DC voltage measurement. Normally this is performed on samples with low resistances below a few Mohm level. Meanwhile,…
We study effects of infrared radiations on a two-dimensional BCS superconductor coupled with a normal metal substrate through a tunneling barrier. The phase transition conditions are analyzed by inspecting stability of the system against…
We propose a novel Sisyphus cooling scheme for atoms confined in a far off resonance optical dipole trap. Utilizing the differential trap-induced AC Stark shift, two electronic levels of the atom are resonantly coupled by a cooling laser…
We study a two-dimensional superconductor in close proximity to a two-dimensional metallic sheet. The electrons in the superconducting sheet are coupled to those in the metallic sheet by the Coulomb interaction only. We obtain an effective…
Single-electron transistors have been proposed to be used as a read-out device for Cooper pair charge qubits. Here we show that a coupled superconducting transistor at a threshold voltage is much more effective in measuring the state of a…
We study motion of vortices in arrays of Josephson junctions at zero temperature where it is controlled by quantum tunneling from one plaquette to another. The tunneling process is characterized by a finite time and can be slow compared to…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…
We analyze the operation of the wireless single-electron logic family based on single-electron-parametron cells. Parameter margins, energy dissipation, and the error probability are calculated using the orthodox theory of single-electron…
The dissipation-induced relaxation (T_1) time of a macroscopic quantum system - a \{lambda}-type three-level rf SQUID flux qubit weakly coupled to control and readout circuitry (CRC) - is investigated via time-domain measurement. The…