Related papers: Spin injection in Silicon at zero magnetic field
We demonstrate microwave manipulation of the spin states of electrically injected spin-polarized electrons in silicon. Although the silicon channel is bounded by ferromagnetic metal films, we show that moderate microwave power can be…
Electrical spin injection from ferromagnetic $\delta$-MnGa into an (Al,Ga)As p-i-n light emitting diode (LED) is demonstrated. The $\delta$-MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin…
Electroluminescence in organic semiconductors strongly depends on the relative population of excited singlet and triplet excitonic states resulting from recombination of injected carriers. In conventional organic light-emitting diodes…
We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different…
The effect of spin-disorder scattering on perpendicular transport in a magnetic monolayer is considered within the single-site Coherent Potential Approximation (CPA). The exchange interaction between a conduction electron and localized…
Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type…
Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-n Al_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of…
Using circularly polarized light is an alternative to electronic ways for spin injection into materials. Spins are injected at a point of the light illumination, and then diffuse and spread radially due to the in-plane gradient of the spin…
Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…
We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/Al2O3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin current which…
We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free…
We observed spin injection into silicon through Fe/MgO tunnel barrier by using non-local magnetoresistance measurement technique. Fe/MgO tunnel barrier contacts with a lateral spin valve structure were fabricated on phosphorous doped…
Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers…
We show that ionization of noble gas atoms by strong infrared circularly polarized laser field under standard exerimental conditions can yield electrons with up to 100% spin polarization in energy resolved measurements. Spin polarization…
Spin injection from a half-metallic electrode in the presence of thermal spin disorder is analyzed using a combination of random matrix theory, spin-diffusion theory, and explicit simulations for the tight-binding s-d model. It is shown…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…
It is shown that, for appropriate values of electron energy, the silicene dot can work as a controllable spin polarizer. The spin polarizer can polarize the spin of transmitted electrons from nearly pure down to nearly pure up by changing…
We calculate circularly polarized luminescence emitted parallel (vertical emission) and perpendicular (edge emission) to the growth direction from a quantum well in a spin light-emitting diode (spin-LED) when either the holes or electrons…
Magnetic $p$-$n$ junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk…
A quantum dot spin LED provides a test of carrier spin injection into a qubit, as well as a means of analyzing carrier spin injection in general and local spin polarization. The polarization of the observed light is, however, significantly…