Related papers: Spin injection in Silicon at zero magnetic field
A novel spin orientation mechanism - dynamic electron spin polarization has been recently suggested in Phys. Rev. Lett. $\mathbf{125}$, 156801 (2020). It takes place for unpolarized optical excitation in weak magnetic fields of the order of…
We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate…
In mesoscopic systems with spin-orbit coupling, spin-injection into quantum dots at zero magnetic field is expected under a wide range of conditions. However, up to now, a viable approach for experimentally identifying such injection has…
Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~…
Nonlinear photomagnetization is a process by which an oscillating electric field induces a static magnetization. We show that all 32 crystallographic point groups admit such spin polarization using circularly polarized electric fields to…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…
Current understanding of spin injection tells us that a metal ferromagnet can inject spin into a semiconductor with 100% efficiency if either the ferromagnet is an ideal half metal with 100% spin polarization, or there exists a suitable…
Silicon carbide (SiC)-based defects are promising for quantum communications, quantum information processing, and for the next generation of quantum sensors, as they feature long coherence times, frequencies near the telecom, and optical…
In this paper we show that it is possible to switch the spin polarization of the photocurrent signal obtained from a single self-assembled quantum dot photodiode under the effect of elliptically polarized light by just increasing the light…
We apply the time-dependent analytical R-matrix theory to develop a movie of hole motion in a Kr atom upon ionization by strong circularly polarized field. We find rich hole dynamics, ranging from rotation to swinging motion. The motion of…
Employing colliding-pulse injection has been shown to enable high-quality electron beams to be generated from laser-plasma accelerators. Here by leveraging test particle simulations, Hamiltonian analysis, and multidimensional…
We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and…
Conventional computer electronics creates a dichotomy between how information is processed and how it is stored. Silicon chips process information by controlling the flow of charge through a network of logic gates. This information is then…
We report on the use of the polarized $^3$He gas filter and neutron resonant enhancement techniques for the measurement of spin-polarized diffuse neutron scattering due to ferromagnetic domains. A CoO/Co exchange biased bilayer was grown on…
We theoretically investigate the spin injection from a ferromagnetic silicene to a normal silicene (FS/NS), where the magnetization in the FS is assumed from the magnetic proximity effect. Based on a silicene lattice model, we demonstrated…
We propose a quantum interference spin-injector nanodevice consisting of a superconductor-normal metal hybrid loop connected to a superconductor-ferromagnet bilayer via a tunneling junction. We show that for certain values of the applied…
We provide an analytic study of the dynamics of semiconductor lasers with injection (pump) of spin-polarized electrons, previously considered in the steady-state regime. Using complementary approaches of quasi-static and small signal…
Light carries angular momentum as spin and orbital components. The spin-orbit interaction (SOI) of light refers to phenomena in which the spin (left or right circular polarisation) affects the spatial degrees of freedom. Recently, interest…
Topological insulators are candidates to open up a novel route in spin based electronics. Different to traditional ferromagnetic materials, where the carrier spin-polarization and magnetization are based on the exchange interaction, the…
Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO2) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field…