Related papers: On the Possibility of an Electronic-structure Modu…
High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind their powerful electron-based counterparts due to the…
Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of…
The present paper gives an elaborate theoretical description of a new molecular charge transport mechanism applying to a single molecule trapped between two macroscopic electrodes in a solid state device. It is shown by a Hubbard type model…
Frequency offset modulation (FOM) is proposed as a new concept to provide both high energy efficiency and high spectral efficiency for communications. In the FOM system, an array of transmitters (TXs) is deployed and only one TX is…
GaN high electron mobility transistors (HEMT) have gained some foothold in the power electronics industry due to wide frequency bandwidth and power handling. The material offers a wide bandgap and higher critical field strength compared to…
The idea of media-based modulation (MBM) is to embed information in the channel states via intentional perturbations of the transmission media. This article covers a broad range of topics regarding MBM, expanding on its benefits and…
Twisted transition metal dichalcogenides are a new platform for realizing strongly correlated physics with high tunability. Recent transport experiments [A. Ghiotto et al. Nature 597, 345 (2021)] have reported the bandwidth-driven evolution…
An electron-cooling principle based on Landau quantization is proposed for nanoscale conductor systems. Operation relies on energy-selective electron tunneling into a two-dimensional electron gas in quantizing magnetic fields. This quantum…
The electron transport properties of a four-terminal molecular device are computed within the framework of density functional theory and non-equilibrium Keldysh theory. The additional two terminals lead to new properties, including a…
In the present work, we have investigated the performances of L shaped Vertical broken bandgapheterostructureInSb InAsn-channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20nm. We have…
We have developed a fast, yet highly reproducible method to fabricate metallic electrodes with nanometer separation using electromigration (EM). We employ four-terminal instead of two-terminal devices in combination with an analog feedback…
Reduced density matrix functional theory for the case of solids is presented and a new exchange correlation functional based on a fractional power of the density matrix is introduced. We show that compared to other functionals, this…
The Wave Function Matching (WFM) technique has recently been developed for the calculation of electronic transport in quantum two-probe systems. In terms of efficiency it is comparable with the widely used Green's function approach. The WFM…
In the past few years considerable attention has been given to the design of Multiple-Input Multiple-Output (MIMO) Eigenmode Transmission Systems (EMTS). This paper presents an in-depth analysis of a new MIMO eigenmode transmission…
For quantum transport through mesoscopic system, a quantum master equation approach is developed in terms of compact expressions for the transport current and the reduced density matrix of the system. The present work is an extension of…
We propose an efficient reduced-order technique for electronic structure calculations of semiconductor nanostructures, suited for inclusion in full-band quantum transport simulators. The model is based on the linear combination of bulk…
A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel…
A vertical transistor based on a double gated, atomically thin heterojunction is theoretically examined. Both p-type and n-type transistor operations can be conveniently achieved by using one of the two gates as the switching gate. The…
Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT) to the thicknesses on the order of or even smaller than the Bohr radius confines electrons in the quantum well even at low…
Electron tomography (ET) has been demonstrated to be a powerful tool in addressing challenging problems, such as understanding 3D interactions among various microstructures. Advancing ET to broader applications requires novel…