Related papers: On the Possibility of an Electronic-structure Modu…
The radial confining potential in a semiconductor nanowire plays a key role in determining its quantum transport properties. Previous reports have shown that an axial magnetic field induces flux-periodic conductance oscillations when the…
For analyzing quantum transport in semiconductor devices, accurate electronic structures are critical for quantitative predictions. Here we report theoretical analysis of electronic structures of all III-V zinc-blende semiconductor…
Electron-electron interactions in materials lead to exotic many-body quantum phenomena including Mott metal-insulator transitions (MITs), magnetism, quantum spin liquids, and superconductivity. These phases depend on electronic band…
The electronic properties of molecular conductors can be readily varied via physical or chemical pressure as it increases the bandwidth W; this enables crossing the Mott insulator-to-metal phase transition by reducing electronic…
Single-electron transistors would represent an approach for less power consuming microelectronic devices if room-temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small,…
Fluctuations are strong in mesoscopic systems and have to be taken into account for the description of transport. We show that they can even be used as a resource for the operation of a system as a device. We use the physics of…
Internet-of-things (IoT) architectures connecting a massive number of heterogeneous devices need energy efficient, low hardware complexity, low cost, simple and secure mechanisms to realize communication among devices. One of the emerging…
Electronic transport is theoretically investigated in laterally confined semiconductor superlattices using the formalism of non-equilibrium Green's functions. The transport properties are calculated for nanowire superlattices of varying…
Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap region can offer larger ON current and…
We present an effective medium theory based on density functional theory that is implemented in VASP using the PAW method with a plane wave basis set. The transmission coefficient is derived through three complementary approaches: the…
Topological insulators (TIs) have been considered as promising candidates for next generation of electronic devices due to their topologically protected quantum transport phenomena. In this work, a scheme for atomic-scale field effect…
We theoretically investigate the electric transport in the pseudogap state of High-Tc cuprates. Starting from the repulsive Hubbard model, we perform the microscopic calculation to describe the pseudogap phenomena which are induced by the…
We suggest and study designed defects in an otherwise periodic potential modulation of a two-dimensional electron gas as an alternative approach to electron spin based quantum information processing in the solid-state using conventional…
Electromagnetic transient (EMT) simulation is essential for analyzing sub-cycle switching phenomena in industrial power systems; however, commercial EMT platforms present significant cost barriers for smaller utilities, consultancies, and…
Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by…
We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a…
We investigate the transport of interacting electrons through single-mode quantum wires whose parameters are periodically modulated on the scale of the electronic Fermi wave length. The Umklapp and backscattering of electrons can be…
In the paper an approach is presented allowing to model quantum logic circuits by electronic gates for discrete spatially modulated electromagnetic signals. The designed circuitry is for modeling low scale quantum nets of general design and…
We have studied theoretically the Kondo effect in the quantum dot(QD) within the whole range of temperature by using the equation-of-motion(EOM) technique based on the non-equilibrium Green function formalism. We have taken the finiteness…
Modular architectures are a promising route toward scalable superconducting quantum processors, but finite fabrication yield and the lack of high quality temporary interconnects impose fundamental limitations on system size. Here, we…