Related papers: On the Possibility of an Electronic-structure Modu…
As a crucial element for various applications, including optical communications and analog photonic links, electro-optic modulators have a small size, low voltage, and wide bandwidth. Electro-optic modulators based on the thin-film lithium…
The detector readout architecture introduced in this paper is intended for small to medium size physics experiments that have moderate bandwidth needs, and applications that require an ultimately low background radioactivity for the parts…
The current-voltage (I-V) characteristics of single-electron transistors (SETs) have been measured in various electromagnetic environments. Some SETs were biased with one-dimensional arrays of dc superconducting quantum interference devices…
We study the electronic structure and thermoelectric properties of recently synthesized CoAsSb. The calculated bandgap becomes more accurate for increasingly-complex electronic structure methods: generalized gradient approximation, hybrid…
The many-body wave-function of an interacting one-dimensional electron system is probed, focusing on the low-density, strong interaction regime. The properties of the wave-function are determined using tunneling between two long, clean,…
In the present work, Cs aberration corrected and monochromated scanning transmission electron microscopy electron energy loss spectroscopy STEM-EELS has been used to explore experimental set-ups that allows bandgaps of high refractive index…
The construction of quantum computer simulators requires advanced software which can capture the most significant characteristics of the quantum behavior and quantum states of qubits in such systems. Additionally, one needs to provide valid…
A technically simple and physically clear method is suggested for the direct measurement of brightness temperature of two-dimensional electron gas (2DEG) in the channel of a high electron mobility transistor (HEMT). The usage of the method…
We propose a method that can consecutively modulate the topological orders or the number of helical edge states in ultrathin film semiconductors without a magnetic field. By applying a staggered periodic potential, the system undergoes a…
The boundary element method (BEM) enables the efficient electromagnetic modelling of lossy conductors with a surface-based discretization. Existing BEM techniques for conductor modelling require either expensive dual basis functions or the…
The potential barrier between source and gate in HEMTs and between source and channel in MOSFET controls the current output and the velocity injection of electrons in the channel [1], [2]. In non self aligned structures the electric field…
Semiconductor coupled quantum dots provide a unique opportunity of tuning bandgaps by tailoring band offsets, making them ideal for photovoltaic and other applications. Here, we have studied stability, trends in the band gap, band offsets,…
The conversion of the modulation signal from the coupling light to the probe light and the conversion of the additional phase noise from the coupling light to the amplitude noise of the probe light in the electromagnetically induced…
Semiconductor emitter can possibly achieve sharp cutoff wavelength due to its intrinsic bandgap absorption and almost zero sub-bandgap emission without doping. A germanium wafer based selective emitter with front-side antireflection and…
Self-consistent theory of electron localization in disordered systems is generalized for the case of interacting electrons. We propose and critically compare a number of possible self-consistency schemes which take into account the lowest…
We propose and analyse a quantum thermal field-effect transistor (qtFET) composed of left-qubit, middle-qutrit, and right-qubit subsystems. In this architecture, the left qubit is coupled to the middle qutrit, which in turn interacts with…
A tunneling transistor without heterojunction as a theoretical design, or more precisely controlled electron current transmission by barrier potential, is under consideration. The electrons from the conduction band of the source tunnel…
Starting from the Kubo formula for conductance, we calculate the frequency-dependent response of a single-electron transistor (SET) driven by an ac signal. Treating tunneling processes within the lowest order approximation, valid for a wide…
We Have developed the concept of a new kind of single-electron transistor in which the transport of the electron through a quantum wire is controlled by charged quantum rings. Using a 2D harmonic potential as the transverse constraint, we…
Self-heating in next-generation, high-power-density field-effect transistor limits performance and complicates fabrication. Here, we introduce NEP-FET, a machine-learned framework for device-scale heat transport simulations of field-effect…