Related papers: On the Possibility of an Electronic-structure Modu…
We present quantum simulations of carbon nanotube field-effect transistors (CNT-FETs) based on top-gated architectures and compare to electrical characterization on devices with 15 nm channel lengths. A non-equilibrium Green's function…
In this letter, a novel communication paradigm for simultaneous wireless information and power transfer (SWIPT) is proposed, which leverages the thermal characteristics of electromagnetic signals. In particular, the proposed scheme exploits…
Molecular electronics on silicon has distinct advantages over its metallic counterpart. We describe a theoretical formalism for transport through semiconductor-molecule heterostructures, combining a semi-empirical treatment of the bulk…
We report density-functional theory (DFT), atomistic simulations of the non-equilibrium transport properties of carbon nanotube (CNT) field-effect transistors (FETs). Results have been obtained within a self-consistent approach based on the…
We present a general formalism for the construction of thermodynamically consistent stochastic models of non-linear electronic circuits. The devices constituting the circuit can have arbitrary I-V curves and may include tunnel junctions,…
The conductance through a finite quantum dot network is studied as a function of inter-dot coupling. As the coupling is reduced, the system undergoes a transition from the antidot regime to the tight binding limit, where Coulomb resonances…
The increasing penetration of inverter-based resources introduces new dynamic challenges to modern power grids, such as sub- and super-synchronous oscillations and other faster dynamics. These dynamics are typically fast in nature and are…
Thyristor rectifiers are a well-established and cost-effective solution for controlled high-power rectification, commonly used for hydrogen electrolysis and HVDC transmission. However, small-signal modeling and analysis of thyristor…
We report on transport measurement study of top-gated field effect transistors made out of InSb nanowires grown by chemical vapor deposition. The transistors exhibit ambipolar transport characteristics revealed by three distinguished…
Using a one-dimensional tight-binding Anderson model, we study a disordered nanowire in the presence of an external gate which can be used for depleting its carrier density (field effect transistor device configuration). In this first…
Temporal modulation unlocks possibilities to dynamically control and modify the response of electromagnetic systems. Employing explicit dependencies of circuit or surface parameters on time enables the engineering of systems with…
With the large-scale hybrid AC-DC grids coming into being, electromagnetic transient (EMT) simulation is required to accurately describe the dynamics of systems. However, the EMT steady-state initialization for hybrid AC-DC system is…
Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of…
Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…
The electrostatic behaviour of an 1,3-Cyclobutadiene (C$_{4}$H$_{4}$) based Single Molecular Transistor (SMT) has been investigated using the first principle calculation based on Density functional Theory and non-equilibrium Green's…
We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion…
In this work, an analytic model is proposed which provides in a continuous manner the current-voltage characteristic (I-V) of high performance tunneling field-effect transistors (TFETs) based on direct bandgap semiconductors. The model…
We apply density functional theory, in the local density approximation, to a quasi-one-dimensional electron gas in order to quantify the effect of Coulomb and correlation effects in modulating, and therefore patterning, the charge density…
Motivated by observation of very high tunnel magnetoresistance (TMR) in Fe-MgO-Fe magnetic tunnel junction devices, we propose a theoretical model for these devices based on a single-band tight-binding approximation. An effort is made to…
The ability to modulate an optical field via an electric field is regarded as a key function of electro-optic interconnects, which are used in optical communications and information processing systems. One of the main required devices for…