Related papers: Monolithic Pixel Sensors in Deep-Submicron SOI Tec…

Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound…

This work presents the design of BUSARD, an application specific integrated circuit (ASIC) for the detection of ionizing particles. The ASIC is a monolithic active pixel sensor which has been fabricated in a High-Voltage…

We demonstrate superconducting single-photon detectors that integrate signals locally at each pixel. This capability is realized by the monolithic integration of superconducting-nanowire single-photon detectors with Josephson electronics.…

Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure…

In order to tackle the charge injection issue that had perplexed the counting type SOI pixel for years, two successive chips CPIXTEG3 and CPIXTEG3b were developed utilizing two shielding mechanisms, Nested-well and Double-SOI, in the LAPIS…

We demonstrate an on-chip Silicon-on-Insulator (SOI) axicon etched using a low resolution (200 nm feature size, 250 nm gap) deep-ultraviolet lithographic fabrication. The axicon consists of circular gratings with seven stages of 1x2…

The X-ray Silicon-On-Insulator (SOI) pixel sensor named XRPIX has been developed for the future X-ray astronomical satellite FORCE. XRPIX is capable of a wide-band X-ray imaging spectroscopy from below 1 keV to a few tens of keV with a good…

Solid-state nanopores, nm-sized holes in thin, freestanding membranes, are powerful single-molecule sensors capable of interrogating a wide range of target analytes, from small molecules to large polymers. Interestingly, due to their high…

The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small…

This Letter introduces a Semiconductor-Under-Insulator (SUI) technology in InP for designing strip waveguides that interface InP photonic crystal membrane structures. Strip waveguides in InP-SUI are supported under an atomic layer deposited…

In the construction of High-Luminosity Large Hadron Collider (HL-LHC) and Future Circular Collider (FCC) experiments, 3D pixel sensors have become indispensable components due to their superior radiation hardness, fast response, and low…

We present the development status of the SOIKID, a detector combining the SOI pixel detector and the superconducting detector KID (Kinetic Inductance Detector). The aim of the SOIKID is to measure X-ray photon energy with the resolution…

Monolithic active pixel sensors with depleted substrates present a promising option for pixel detectors in high-radiation environments. High-resistivity silicon substrates and high bias voltage capabilities in commercial CMOS technologies…

Silicon photonics provides a versatile platform for large-scale integration of optical functions, but its weak intrinsic nonlinear response limits the realization of active, intensity-dependent functionalities. Hybrid integration of…

We have been developing event-driven SOI Pixel Detectors, named `XRPIX' (X-Ray soiPIXel) based on the silicon-on-insulator (SOI) pixel technology, for the future X-ray astronomical satellite with wide band coverage from 0.5 keV to 40 keV.…

CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a…

Dense tracking environments in experiments at CERN's High-Luminosity LHC and future FCC experiments call for an increased use of timing information in addition to the position measurement of pixel detectors. This adds one dimension to the…

The concept of the deep trapping gate device was introduced fairly recently on the basis of technological and transport simulations currently used in the field of classical electron devices. The concept of a buried gate containing localized…

We present a method of embedding a Monolithic Active Pixel Sensor (MAPS) into a flexible printed circuit board (FPC) and its interconnection by means of through-hole copper plating. The resulting assembly, baptised "MAPS foil", is a…

Semiconductor pixel detectors are widely established in High Energy Physics (HEP) and Medical physics for their high spatial resolution and tracking capabilities. Research on both monolithic detectors and hybrid detectors is ongoing.…